Abstract: Gate-all-around integrated circuit structures fabricated using alternate etch selective material, and the resulting structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is over the vertical arrangement of horizontal nanowires. A pair of dielectric spacers is along sides of the gate stack and over the vertical arrangement of horizontal nanowires. A metal oxide material is between adjacent ones of the vertical arrangement of horizontal nanowires at a location between the pair of dielectric spacers and the sides of the gate stack.

Abstract: Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.

Abstract: A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.

Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: A hollow pedestal bed end for a rise and fall patient's bed is made of reduced width to fold over the mattress frame and pass through a door opening. The inner faces of the paired bed ends each have a slot through which a mattress frame bracket projects. A wheeled carriage inside the bed end rides on an upright guide and the bracket projects from the guide. The rise and fall motion is supplied by a linear actuator whose small movements are multiplied by a third order lever. The frame is thus lifted by a pair of such pedestal ends.

Abstract: A method and apparatus for fabricating an orthopaedic prosthetic component includes rotating the orthopaedic prosthetic component and operating an electrical discharge machining cutting tool (EDM) to move a wire electrode of the EDM along an arcuate path. A spark is generated between the wire electrode and the orthopaedic prosthetic component to remove a portion of the orthopaedic prosthetic component.

Abstract: A method and apparatus for fabricating an aspherical orthopaedic prosthetic component includes rotating the orthopaedic prosthetic component and operating an electrical discharge machining cutting tool (EDM) to move a wire electrode of the EDM along a number of arcuate cutting paths. A spark is generated between the wire electrode and the orthopaedic prosthetic component to remove a portion of the orthopaedic prosthetic component.

Abstract: A hollow pedestal bed end for a rise and fall patient's bed is made of reduced width to fold over the mattress frame and pass through a door opening. The inner faces of the paired bed ends each have a slot through which a mattress frame bracket projects. A wheeled carriage inside the bed end rides on an upright guide and the bracket projects from the guide. The rise and fall motion is supplied by a linear actuator whose small movements are multiplied by a third order lever. The frame is thus lifted by a pair of such pedestal ends.

Abstract: A method and apparatus for fabricating an aspherical orthopaedic prosthetic component includes rotating the orthopaedic prosthetic component and operating an electrical discharge machining cutting tool (EDM) to move a wire electrode of the EDM along a number of arcuate cutting paths. A spark is generated between the wire electrode and the orthopaedic prosthetic component to remove a portion of the orthopaedic prosthetic component.

Abstract: A method and apparatus for fabricating an orthopaedic prosthetic component includes rotating the orthopaedic prosthetic component and operating an electrical discharge machining cutting tool (EDM) to move a wire electrode of the EDM along an arcuate path. A spark is generated between the wire electrode and the orthopaedic prosthetic component to remove a portion of the orthopaedic prosthetic component.

Abstract: An improved automatic blanket wash system for offset printing wherein the washing medium is a water-in-oil emulsion containing 5-35 percent by weight water and 65-95 percent by weight of a water insoluble phase that contains certain hydrocarbons in specific proportions and a surfactant having an HLB of 3-11.

Abstract: Narrow pulse modulation (less than four nanoseconds) of millimeter wave ts will enable radar systems to achieve improved pattern recognition. The modulator has an outer cylindrical return shield surrounding a tetrode thyratron. An inner cylindrical shield connected to the anode provides capacitive energy storage for generating the output pulse when the control grid is triggered. The anode is connected via only a resistance to the direct current supply.