Abstract: A method and system for fabricating semiconductor lasers includes the determination of a statistical predictive relationship between attribute measurements and mode index values for lasers fabricated according to a design. The predictive relationship predicts a specific mode index value using a specific attribute measurement. The predictive relationship may be applied in a fabrication process for lasers subsequently fabricated according to the design, and an appropriate grating structure providing increased production of lasers that lase at substantially target wavelengths is enabled.

Abstract: An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher temperature range. A prior art liquid phase epitaxy process involves a low temperature soak at a temperature of approximately 615 degrees Centrigrade followed by ramped cooling and epitaxial growth of a guiding layer, active layer and confining layer at a temperature of approximately 595 degrees Centigrade. The interrupted liquid phase epitaxy process involves epitaxial growth of a guiding layer in a manner similar to the prior art process, but growth of the guiding layer is followed by a high temperature soak at a temperature of approximately 645 degrees Centrigrade. Ramped cooling follows, with epitaxial growth of the active layer and confining layer taking place at a temperature of approximately 628 degrees Centigrade.

Abstract: In a method for Liquid Phase Epitaxy (LPE) of semi-insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperature below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.

Abstract: A method of making an improved aluminum oxide (sapphire) gate field effect transistor wherein the capacitance-voltage characteristic of the transistor is improved by annealing the aluminum oxide at a temperature less than the growth temperature of the aluminum oxide. A transistor annealed at a temperature less than the growth temperature is provided wherein the threshold voltage is the same as if the transistor were annealed at a temperature greater than the growth temperature; the capacitance-voltage characteristic of the transistor exhibiting markedly diminished hysteresis by annealing at a temperature less than the growth temperature.