Abstract: A device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor wherein said embedded singulated capacitor comprises at least a first electrode and a second electrode and wherein said embedded singulated capacitor is positioned on the outer layer of the power core so that at least one Vcc (power) terminal and at least one Vss (ground) terminal of a semiconductor device can be directly connected to at least one first and at least one second electrode, respectively and wherein the first and second electrode of the singulated capacitor is interconnected to the first and second electrode respectively of an external planar capacitor embedded within a printed wiring motherboard.

Abstract: Provided herein are devices comprising a printed wiring board that comprise, singulated capacitors fabricated from known good, thin-film, fired-on-foil capacitors. Provided are methods of incorporating the singulated capacitors into the build-up layers of a printed wiring board to minimize impedance. The singulated capacitors have a pitch that allows each power and ground terminal of an IC to be directly connected to a power and ground electrode, respectively, of its own singulated capacitor. Using a feedstock of known good, fired-on-foil capacitors allows for improved PWB yield.

Abstract: Methods of making thin film capacitors formed on foil by forming onto a thin film dielectric in a single deposition event an integrally complete top electrode having a minimum thickness of at least 1 micron.

Abstract: A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.

Abstract: Methods of making metal/dielectric/metal structures include casting copper slurry onto a fugitive substrate to form the first electrode and subsequently casting dielectric and copper slurries onto the first electrode, removing the fugitive substrate and co-firing the structure, wherein the dielectric comprises glass in an amount that is less than 20% by weight of the total inorganic composition and the dielectric achieves substantially complete densification. Alternatively, a metal tape and a dielectric tape, comprising glass in the above amount, may be formed and laminated together to form a metal/dielectric/metal green tape structure, which is co-fired, such that the structure achieves substantially complete densification.

Abstract: Making process test capacitors simultaneously with circuit capacitors that are to be embedded into a printed wiring board and firing the test capacitors to result in fired-on-foil test capacitors for the purpose of using the test capacitors as test substitutes for the embedded circuit capacitors to predict whether capacitance, dissipation factor or insulation resistance of the circuit capacitors will fall within acceptable specified ranges prior to and after embedment.

Abstract: Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Abstract: Disclosed are a method of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A dielectric precursor layer and the base metal foil are prefired at a prefiring temperature in the range of 350 to 650° C. in a moist atmosphere that also comprises a reducing gas. The prefired dielectric precursor layer and base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200° C. in an atmosphere having an oxygen partial pressure of less than about 10?6 atmospheres to produce a dielectric. The area of the capacitor made according to the disclosed method may be greater than 10 mm2, and subdivided to create a multiple individual capacitor units that may be embedded in printed wiring boards. The dielectric is typically comprised of crystalline barium titanate or crystalline barium strontium titanate.

Abstract: The present invention is directed to an article comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Abstract: A printed wiring board semiconductor package or PWB power core comprising singulated capacitors embedded on multiple layers of the printed wiring board semiconductor package wherein at least a part of each embedded capacitor lies within the die shadow and wherein the embedded, singulated capacitors comprise at least a first electrode and a second electrode. The first electrodes and second electrodes of the embedded singulated capacitors are interconnected to the Vcc (power) terminals and the Vss (ground) terminals respectively of a semiconductor device. The size of the embedded capacitors are varied to produce different self-resonant frequencies and their vertical placements within the PWB semiconductor package are used to control the inherent inductance of the capacitor-semiconductor electrical interconnections so that customized resonant frequencies of the embedded capacitors can be achieved with low impedance.

Abstract: Provided herein are devices comprising a printed wiring board that comprise, singulated capacitors fabricated from known good, thin-film, fired-on-foil capacitors. Provided are methods of incorporating the singulated capacitors into the build-up layers of a printed wiring board to minimize impedance. The singulated capacitors have a pitch that allows each power and ground terminal of an IC to be directly connected to a power and ground electrode, respectively, of its own singulated capacitor. Using a feedstock of known good, fired-on-foil capacitors allows for improved PWB yield.

Abstract: A device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor wherein said embedded singulated capacitor comprises at least a first electrode and a second electrode and wherein said embedded singulated capacitor is positioned on the outer layer of the power core so that at least one Vcc (power) terminal and at least one Vss (ground) terminal of a semiconductor device can be directly connected to at least one first and at least one second electrode, respectively and wherein the first and second electrode of the singulated capacitor is interconnected to the first and second electrode respectively of an external planar capacitor embedded within a printed wiring motherboard.

Abstract: Methods of making metal/dielectric/metal structures include casting copper slurry onto a fugitive substrate to form the first electrode and subsequently casting dielectric and copper slurries onto the first electrode, removing the fugitive substrate and co-firing the structure, wherein the dielectric comprises glass in an amount that is less than 20% by weight of the total inorganic composition and the dielectric achieves substantially complete densification. Alternatively, a metal tape and a dielectric tape, comprising glass in the above amount, may be formed and laminated together to form a metal/dielectric/metal green tape structure, which is co-fired, such that the structure achieves substantially complete densification.

Abstract: Methods of making thin film capacitors formed on foil by forming onto a thin film dielectric in a single deposition event an integrally complete top electrode having a minimum thickness of at least 1 micron.

Abstract: Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Abstract: The present invention is directed to an article comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Abstract: Compositions comprising: an epoxy containing cyclic olefin resin with a water absorption of 2% or less; one or more phenolic resins with water absorption of less than 2% or less; an epoxy catalyst; optionally one or more of an electrically insulated filler, a defoamer and a colorant and one or more organic solvents. The compositions are useful as encapsulants and have a cure temperature of 190° C. or less.

Abstract: An organic encapsulant composition applied to formed-on-foil ceramic capacitors and embedded inside printed wiring boards allows the capacitor to resist printed wiring board chemicals and pass 1000 hours of accelerated life testing conducted under high humidity, elevated temperature and applied DC bias.

Abstract: A method of embedding thick-film capacitors includes etching foil electrodes outside the boundary of the capacitor dielectric to prevent etching solutions from coming in contact with and damaging the capacitor dielectric layers.

Abstract: The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; wherein the barium/titanium-containing additives are not intentionally modified or doped; wherein the composition has been annealed in an environment having an oxygen partial pressure of less than about 10?7 atmospheres and/or at a temperature in the range of 700° C. and 1050° C.; wherein a capacitor comprising the composition would have a loss tangent of greater than about 0.07; and wherein the composition is not reoxygenated.