Abstract: A method for etching silicon layer of a substrate, which is deposited on a bottom electrode in a plasma processing chamber. The method includes performing a main etch step until at least 70 percent of silicon layer is etched. The method further includes an overetch step, which includes a first, second, and third process steps. The first process step employs a first process recipe, the second process step employs a second process recipe, and the third process step employs a third process recipe. The second process recipe employs a second bottom bias voltage level applied to the bottom electrode which is higher than the first bottom bias voltage level employs in the first process recipe and the third bottom bias voltage level employs in the third process recipe. The first, second, and third process steps are alternated a plurality of times until silicon layer is etched through.

Abstract: A method for etching silicon layer of a substrate, which is deposited on a bottom electrode in a plasma processing chamber. The method includes performing a main etch step until at least 70 percent of silicon layer is etched. The method further includes an overetch step, which includes a first, second, and third process steps. The first process step employs a first process recipe, the second process step employs a second process recipe, and the third process step employs a third process recipe. The second process recipe employs a second bottom bias voltage level applied to the bottom electrode which is higher than the first bottom bias voltage level employs in the first process recipe and the third bottom bias voltage level employs in the third process recipe. The first, second, and third process steps are alternated a plurality of times until silicon layer is etched through.

Abstract: A ceramic part having a surface exposed to the interior space, the surface having been shaped and plasma conditioned to reduce particles thereon by contacting the shaped surface with a high intensity plasma. The ceramic part can be made by sintering or machining a chemically deposited material. During processing of semiconductor substrates, particle contamination can be minimized by the ceramic part as a result of the plasma conditioning treatment. The ceramic part can be made of various materials such as alumina, silicon dioxide, quartz, carbon, silicon, silicon carbide, silicon nitride, boron nitride, boron carbide, aluminum nitride or titanium carbide.