Abstract: Motor drive power conversion systems are provided including a rectifier and a switching inverter, wherein the switching devices of the rectifier, the inverter and/or of a DC/DC converter are silicon carbide switches, such as silicon carbide MOSFETs. Driver circuits are provided for providing bipolar gate drive signals to the silicon carbide MOSFETs, including providing negative gate-source voltage for controlling the off state of enhancement mode low side drivers and positive gate-source voltage for controlling the off state of enhancement mode high side drivers.

Abstract: Motor drive power conversion systems are provided including a rectifier and a switching inverter, wherein the switching devices of the rectifier, the inverter and/or of a DC/DC converter are silicon carbide switches, such as silicon carbide MOSFETs. Driver circuits are provided for providing bipolar gate drive signals to the silicon carbide MOSFETs, including providing negative gate-source voltage for controlling the off state of enhancement mode low side drivers and positive gate-source voltage for controlling the off state of enhancement mode high side drivers.

Abstract: Motor drive power conversion systems are provided including a rectifier and a switching inverter, wherein the switching devices of the rectifier, the inverter and/or of a DC/DC converter are silicon carbide switches, such as silicon carbide MOSFETs. Driver circuits are provided for providing bipolar gate drive signals to the silicon carbide MOSFETs, including providing negative gate-source voltage for controlling the off state of enhancement mode low side drivers and positive gate-source voltage for controlling the off state of enhancement mode high side drivers.

Abstract: Motor drive power conversion systems are provided including a rectifier and a switching inverter, wherein the switching devices of the rectifier, the inverter and/or of a DC/DC converter are silicon carbide switches, such as silicon carbide MOSFETs. Driver circuits are provided for providing bipolar gate drive signals to the silicon carbide MOSFETs, including providing negative gate-source voltage for controlling the off state of enhancement mode low side drivers and positive gate-source voltage for controlling the off state of enhancement mode high side drivers.

Abstract: Floating electrically isolated active impedance modules are formed to attach to power transmission lines without breaking the lines such that the power line forms a secondary of the main transformer of the module. Each module includes an electrical energy storage device and a switching circuit, such as a single phase inverter, connected to the storage device and to the main transformer primary winding. The inverter can be controlled to couple a selected voltage to the transmission line through the main transformer primary winding which can provide effective positive impedance, negative impedance, or a voltage at or near phase quadrature with the line current. Many active impedance modules may be distributed over a power system grid to allow control of the impedance of the power lines in the grid and to steer power through the grid, with each module electrically isolated from ground and from other phase lines of the transmission system.