Patents by Inventor William C. Hicks

William C. Hicks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6974984
    Abstract: Methods of depositing various metal layers adjacent to a ferroelectric polymer layer are disclosed. In one embodiment, a collimator may be used during a sputtering process to filter out charged particles from the material that may be deposited as a metal layer. In various embodiments, a metal layer may contain at least one of an intermetallic layer, an amorphous intermetallic layer, and an amorphized intermetallic layer.
    Type: Grant
    Filed: December 31, 2003
    Date of Patent: December 13, 2005
    Assignee: Intel Corporation
    Inventors: Hitesh Windlass, Ebrahim Andideh, Daniel C. Diana, Mark Richards, William C. Hicks
  • Patent number: 6046139
    Abstract: We make large (in excess of 2 cm in diameter), single crystal YBa.sub.2 Cu.sub.3 O.sub.7-x [123 YBCO] crystals, where x.ltoreq.0.6, in a seventeen step process or some variant thereof from finely ground and well mixed 123 YBCO and 211 YBCO powders with a small amount of Pt by controlling the rate of cooling from within a compact of the powders using a temperature gradient in the radial and axial planes (independently) of about 1-1.degree. C./inch diameter of compact to nucleate the crystal growth. We promote crystal growth as well using a samarium oxide seed crystal, preferably SmBa.sub.2 Cu.sub.3 O.sub.(7-y), where y.ltoreq.1.6. After nucleation we cool the compact slowly at a rate from about 0.1-1.degree. C./hr to promote the single crystal development.
    Type: Grant
    Filed: August 7, 1998
    Date of Patent: April 4, 2000
    Assignee: The Boeing Company
    Inventors: Kay Y. Blohowiak, Darryl F. Garrigus, Thomas S. Luhman, Kevin E. McCrary, Michael Strasik, Ilhan Aksay, Fatih Dogan, William C. Hicks, Corrie B. Martin