Abstract: A method of packaging an integrated circuit includes (a) providing: (i) an integrated circuit (e.g., in wafer form) having a two-dimensional contact array on a top surface thereof, (ii) a polymer shell lower portion, and (iii) a polymer shell upper portion, said upper portion having a two-dimensional array of openings formed therein, which array of openings corresponds to said two dimensional contact array; wherein one or both of said polymer shell upper and lower portions are produced by the process of additive manufacturing; and (b) enclosing said integrated circuit between said polymer shell lower portion and said polymer shell upper portion with said contact array aligned with array of openings to produce a integrated circuit packaged within a polymer shell.

Abstract: Semiconductor laser of electrically pumped type comprising a substrate of III-V compound semiconductor material or mixed ternary III-V semiconductor composition having a mesa structure provided with a p-n junction between regions of opposite conductivity therein. An electrical power source is connected to the mesa and upon activation causes the injection of minority carriers across the p-n junction, such that laser radiation is produced from the p-n junction.

Abstract: A planar optical waveguide is optically coupled to a source of laser radiation for propagation of light therein. The optical waveguide comprises a substrate having a first light transmitting layer deposited thereon and a second light transmitting layer deposited on the first layer. Both light transmitting layers are made of materials having indexes of refraction compatable with a semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions. The index of refraction of the second light transmitting layer is higher than the index of refraction of the first light transmitting layer thereby providing optical confinement in the second layer.

Abstract: An integrated optical circuit transmitter fabricated on a single semiconductor substrate, which includes a source of optical pulses of variable wavelengths at a predetermined repetition rate. This source may take the form of a surface laser of III-V semiconductor compound material or a mixed ternary III-V semiconductor composition which includes a portion of the substrate and a semiconductor mesa of III-V semiconductor compound material or mixed ternary III-V semiconductor composition mounted on the substrate and having an active surface laser region along the top thereof in which laser radiation is generated in response to the admission of laser radiation through the substrate and the mesa in a direction extending thereto.