Abstract: The present invention includes a transistor having a channel region with a first and second section, wherein the sections have lengths that generally perpendicular to one another. The prevent invention also includes the transistor in an SRAM cell and processes for forming the transistor and the SRAM cell. In the embodiments that are described, the first section has a length that is generally vertical and the second section has a length that is generally extends in a lateral direction. The first section may be an undoped or lightly doped portion of a silicon plug. The plug may be formed including an etching or polishing step.

Abstract: A method for forming a vertical neuron MOSFET begins by providing a substrate (12). One or more conductive layers (24 and 28) are formed overlying the substrate (12). An opening (32) is formed through a portion of the conductive layers (24 and 28) to form one or more control electrodes from the conductive layers (24 and 28). A floating gate (36, and 38) is formed adjacent each of the control electrodes. A dielectric layer (34) is formed within the opening (32) and between the control electrodes and the floating gate (36, and 38) to provide for capacitive coupling between the control electrodes and the floating gate (36, and 38). The capacitive coupling may be altered for each control electrode via isotropic sidewall etching and other methods. By forming the neuron MOSFET in a vertical manner, a surface area of the neuron MOSFET is reduced when compared to known neuron MOSFET structures.

Abstract: A modular plug is locked in a modular receptacle by a frangible locking member disintegral from such modular plug. An internal first catch on that frangible locking member catches an inside of the modular receptacle. The internal first catch is rendered inaccessible from outside the modular receptacle when the frangible locking member and the modular plug are in place in that modular receptacle. A second catch on the frangible locking member detains the modular plug in the modular receptacle until the frangible locking member has been broken up. A device for locking a modular plug in a modular receptacle has a locking member disintegral from such modular plug and having a frangible head. A pair of spaced flexible prongs project from such head. A catch on each of such flexible prongs is spaced from the frangible head and a third or middle prong projects from the head between the pair of spaced flexible prongs.

Abstract: A method for forming a vertical neuron MOSFET begins by providing a substrate (12). One or more conductive layers (24 and 28) are formed overlying the substrate (12). An opening (32) is formed through a portion of the conductive layers (24 and 28) to form one or more control electrodes from the conductive layers (24 and 28). A floating gate (36, and 38) is formed adjacent each of the control electrodes. A dielectric layer (34) is formed within the opening (32) and between the control electrodes and the floating gate (36, and 38) to provide for capacitive coupling between the control electrodes and the floating gate (36, and 38). The capacitive coupling may be altered for each control electrode via isotropic sidewall etching and other methods. By forming the neuron MOSFET in a vertical manner, a surface area of the neuron MOSFET is reduced when compared to known neuron MOSFET structures.

Abstract: The present invention includes a transistor having a channel region with a first and second section, wherein the sections have lengths that generally perpendicular to one another. The prevent invention also includes the transistor in an SRAM cell and processes for forming the transistor and the SRAM cell. In the embodiments that are described, the first section has a length that is generally vertical and the second section has a length that is generally extends in a lateral direction. The first section may be an undoped or lightly doped portion of a silicon plug. The plug may be formed including an etching or polishing step.

Abstract: Shearing motion between first and second parts of an electromagnetic lock for maintaining a door shut are translated into a force tending to lift the second part away from the first part of the energized lock, and the shearing motion is countered by countering the latter force with the magnetic attraction between the first and second parts of the energized electromagnetic lock. The mechanical friction between the mutually attracted first and second lock parts is added to the full holding force between these parts, so that the holding power of the lock considerably exceeds the holding power generated by the magnetic field between the first and second parts alone.