Abstract: An improved damper diode is obtained by replacing the usual step junction (P.sup.+ -Nu-N.sup.+) structure of the prior art with an epitaxial double sided Pi-Nu structure (i.e., P.sup.+ -Pi-Nu-N.sup.+) in which the thickness and impurity concentrations of the Pi and Nu regions are substantially equal and have a combined thickness about equal to the prior art Nu region for the same voltage. Improved transient response (TFR), better transient energy absorption capability (UIS) and lower forward transient turn-on peak over-shoot voltage (TOPO) is obtained for the same or higher reverse breakdown voltage (BVR), in the same or smaller die size.