Patents by Inventor William C. West
William C. West has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080304207Abstract: Double-layer capacitors capable of operating at extremely low temperatures (e.g., as low as ?75° C.) are disclosed. Electrolyte solutions combining a base solvent (e.g., acetonitrile) and a cosolvent are employed to lower the melting point of the base electrolyte. Example cosolvents include methyl formate, ethyl acetate, methyl acetate, propionitrile, butyronitrile, and 1,3-dioxolane. An optimized concentration (e.g., 0.10 M to 0.75 M) of salt, such as tetraethylammonium tetrafluoroborate, is disolved into the electrolyte solution. In some cases (e.g., 1,3-dioxolane cosolvent) additives, such as 2% by volume triethylamine, may be included in the solvent mixture to prevent polymerization of the solution. Conventional device form factors and structural elements (e.g., porous carbon electrodes and a polyethylene separator) may be employed.Type: ApplicationFiled: June 5, 2008Publication date: December 11, 2008Applicant: California Institute of TechnologyInventors: Erik J. Brandon, Marshall C. Smart, William C. West
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Patent number: 7142450Abstract: A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode.Type: GrantFiled: September 27, 2004Date of Patent: November 28, 2006Assignees: Arizona Board of Regents, Axon Technologies CorporationInventors: Michael N. Kozicki, William C. West
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Patent number: 6798692Abstract: A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.Type: GrantFiled: May 21, 2002Date of Patent: September 28, 2004Assignee: Axon Technologies CorporationInventors: Michael N. Kozicki, William C. West
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Patent number: 6764525Abstract: A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300° C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof.Type: GrantFiled: March 11, 2003Date of Patent: July 20, 2004Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Jay F. Whitacre, Ratnakumar V. Bugga, William C. West
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Publication number: 20040006264Abstract: A neural prosthetic micro system includes an electrode array coupled to an integrated circuit (IC) which may include signal conditioning and processing circuitry. The IC may include a high pass filter that passes signals representative of local field potential (LFP) activity in a subject's brain.Type: ApplicationFiled: November 20, 2002Publication date: January 8, 2004Inventors: Mohammad M. Mojarradi, Erik J. Brandon, Jay F. Whitacre, Linda Y. Del Castillo, Richard A. Andersen, Travis W. Johnson, William C. West
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Patent number: 6558836Abstract: A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300° C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof. The batteries produced by the above process are disclosed.Type: GrantFiled: February 8, 2001Date of Patent: May 6, 2003Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Jay F. Whitacre, Ratnakumar V. Bugga, William C. West
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Publication number: 20020190350Abstract: A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor, such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with, Group IB or Group IIB metal. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.Type: ApplicationFiled: May 21, 2002Publication date: December 19, 2002Applicant: ARIZONA BOARD OF REGENTSInventors: Michael N. Kozicki, William C. West
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Patent number: 6418049Abstract: A programmable sub-surface aggregating metallization sructure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of the two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.Type: GrantFiled: July 27, 2000Date of Patent: July 9, 2002Assignee: Arizona Board of RegentsInventors: Michael N. Kozicki, William C. West
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Patent number: 6084796Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.Type: GrantFiled: January 12, 1999Date of Patent: July 4, 2000Assignees: Axon Technologies Corporation, Arizona Board of RegentsInventors: Michael N. Kozicki, William C. West
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Patent number: 5914893Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.Type: GrantFiled: January 7, 1998Date of Patent: June 22, 1999Assignees: Axon Technologies Corporation, Arizona Board of RegentsInventors: Michael N. Kozicki, William C. West
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Patent number: 5896312Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.Type: GrantFiled: January 7, 1998Date of Patent: April 20, 1999Assignee: Axon Technologies CorporationInventors: Michael N. Kozicki, William C. West
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Patent number: 5761115Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.Type: GrantFiled: May 30, 1996Date of Patent: June 2, 1998Assignees: Axon Technologies Corporation, Arizona Board of RegentsInventors: Michael N. Kozicki, William C. West