Patents by Inventor William C. West

William C. West has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080304207
    Abstract: Double-layer capacitors capable of operating at extremely low temperatures (e.g., as low as ?75° C.) are disclosed. Electrolyte solutions combining a base solvent (e.g., acetonitrile) and a cosolvent are employed to lower the melting point of the base electrolyte. Example cosolvents include methyl formate, ethyl acetate, methyl acetate, propionitrile, butyronitrile, and 1,3-dioxolane. An optimized concentration (e.g., 0.10 M to 0.75 M) of salt, such as tetraethylammonium tetrafluoroborate, is disolved into the electrolyte solution. In some cases (e.g., 1,3-dioxolane cosolvent) additives, such as 2% by volume triethylamine, may be included in the solvent mixture to prevent polymerization of the solution. Conventional device form factors and structural elements (e.g., porous carbon electrodes and a polyethylene separator) may be employed.
    Type: Application
    Filed: June 5, 2008
    Publication date: December 11, 2008
    Applicant: California Institute of Technology
    Inventors: Erik J. Brandon, Marshall C. Smart, William C. West
  • Patent number: 7142450
    Abstract: A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode.
    Type: Grant
    Filed: September 27, 2004
    Date of Patent: November 28, 2006
    Assignees: Arizona Board of Regents, Axon Technologies Corporation
    Inventors: Michael N. Kozicki, William C. West
  • Patent number: 6798692
    Abstract: A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.
    Type: Grant
    Filed: May 21, 2002
    Date of Patent: September 28, 2004
    Assignee: Axon Technologies Corporation
    Inventors: Michael N. Kozicki, William C. West
  • Patent number: 6764525
    Abstract: A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300° C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: July 20, 2004
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Jay F. Whitacre, Ratnakumar V. Bugga, William C. West
  • Publication number: 20040006264
    Abstract: A neural prosthetic micro system includes an electrode array coupled to an integrated circuit (IC) which may include signal conditioning and processing circuitry. The IC may include a high pass filter that passes signals representative of local field potential (LFP) activity in a subject's brain.
    Type: Application
    Filed: November 20, 2002
    Publication date: January 8, 2004
    Inventors: Mohammad M. Mojarradi, Erik J. Brandon, Jay F. Whitacre, Linda Y. Del Castillo, Richard A. Andersen, Travis W. Johnson, William C. West
  • Patent number: 6558836
    Abstract: A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300° C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof. The batteries produced by the above process are disclosed.
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: May 6, 2003
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Jay F. Whitacre, Ratnakumar V. Bugga, William C. West
  • Publication number: 20020190350
    Abstract: A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor, such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with, Group IB or Group IIB metal. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.
    Type: Application
    Filed: May 21, 2002
    Publication date: December 19, 2002
    Applicant: ARIZONA BOARD OF REGENTS
    Inventors: Michael N. Kozicki, William C. West
  • Patent number: 6418049
    Abstract: A programmable sub-surface aggregating metallization sructure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of the two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.
    Type: Grant
    Filed: July 27, 2000
    Date of Patent: July 9, 2002
    Assignee: Arizona Board of Regents
    Inventors: Michael N. Kozicki, William C. West
  • Patent number: 6084796
    Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: July 4, 2000
    Assignees: Axon Technologies Corporation, Arizona Board of Regents
    Inventors: Michael N. Kozicki, William C. West
  • Patent number: 5914893
    Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.
    Type: Grant
    Filed: January 7, 1998
    Date of Patent: June 22, 1999
    Assignees: Axon Technologies Corporation, Arizona Board of Regents
    Inventors: Michael N. Kozicki, William C. West
  • Patent number: 5896312
    Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.
    Type: Grant
    Filed: January 7, 1998
    Date of Patent: April 20, 1999
    Assignee: Axon Technologies Corporation
    Inventors: Michael N. Kozicki, William C. West
  • Patent number: 5761115
    Abstract: A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.
    Type: Grant
    Filed: May 30, 1996
    Date of Patent: June 2, 1998
    Assignees: Axon Technologies Corporation, Arizona Board of Regents
    Inventors: Michael N. Kozicki, William C. West