Patents by Inventor William Charles Pesklak

William Charles Pesklak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for determining an epitaxial layer thickness and transition width
    Patent number: 5891242
    Abstract: An apparatus for and a method of determining the epitaxial layer thickness and transition width in epitaxial single crystal silicon wafers are provided. The apparatus provides an epitaxial single crystal silicon wafer comprising an isotopically enriched doped substrate. The method involves a process of applying Second Ion Mass Spectrometry (SIMS) to the isotopically enriched doped wafer for determining its epitaxial layer thickness and transition width.
    Type: Grant
    Filed: June 13, 1997
    Date of Patent: April 6, 1999
    Assignee: Seh America, Inc.
    Inventors: William Charles Pesklak, Bruce Laurence Colburn