Abstract: A method and apparatus that improves either power savings and/or DRAM system access bandwidth in an embedded DRAM device. The apparatus (200, 800, or 900) contains embedded DRAM memory devices (212, 802, or 902) which require refresh operations in order to retain data. As the memory devices (212, 802, or 902) are accessed by read and write system operations and by refresh operations, a set of history bits (204, 808, 904) are continually updated to indicate a level of freshness for the charge stored in various DRAM memory rows. When scheduled refresh opportunities arrive for each memory row in the embedded DRAM devices, the history bits (204, 808, 904) are accessed to determine if the refresh operation of a row of memory should be performed or if the refresh operation should be postponed until a subsequent refresh time period.

Abstract: A method of memory array testing that detects defects which are sensitive to environmental conditions. A repair signature is generated reflecting the repair state of the memory. A memory device is rejected if there is a change in the repair signature of the memory array over the operating range of the device. In one embodiment, an integrated circuit includes a memory array, spare memory elements for repairing defective locations of the memory array, a built-in self-test (BIST) circuit for detecting faults in the memory array, a built-in self-repair (BISR) circuit for causing the failed memory location of the memory array to be replaced with a spare memory element, and a signature generator where the signature is based on a compression of addresses corresponding to failed memory locations, wherein the signature is used to determine that a repair result of the memory array is invariant over different environmental conditions.