Abstract: A multi-bit tool (1) including a housing (2) and a drive input shaft (3). The housing incorporates at least two storage recesses (5) accessible from outside the housing. The housing may include a first (6) and a second (7) socket, each axially aligned with the drive input shaft, the first socket being smaller than the second socket and positioned intermediate the second socket and the drive input shaft such that tool bits (4) driven by the first socket pass through the second socket to drivably engage with the first socket. It is preferable that the storage recesses communicate with a central bore to permit the active bit to be internally interchanged. To this end the housing may further incorporate a bore axially aligned with the drive input shaft and the first and second sockets.

Abstract: A multi-bit tool (1) including a housing (2) and a drive input shaft (3). The housing incorporates at least two storage recesses (5) accessible from outside the housing. The housing may include a first (6) and a second (7) socket, each axially aligned with the drive input shaft, the first socket being smaller than the second socket and positioned intermediate the second socket and the drive input shaft such that tool bits (4) driven by the first socket pass through the second socket to drivably engage with the first socket. It is preferable that the storage recesses communicate with a central bore to permit the active bit to be internally interchanged. To this end the housing may further incorporate a bore axially aligned with the drive input shaft and the first and second sockets.

Abstract: Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.

Abstract: A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

Abstract: A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

Abstract: The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Abstract: A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

Abstract: Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.

Abstract: Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m2, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.

Abstract: Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.

Abstract: The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Abstract: The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Abstract: The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Abstract: The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Abstract: A continuously variable reversible transmission including an input shaft (2), a housing (1), an input arm (4), first and second CVT shafts (5.6), a fixed input wheel (35), a ratio selector mechanism, an overall output wheel (36) and an output shaft (24). The input arm (4) is fixed to the input shaft (2) and extends substantially perpendicular to the input shaft. At each end of the input arm, a first (5) and second (6) CVT shaft is rotatably mounted, with the axes of the CVT shafts extending parallel to the input shaft. The fixed input wheel (35) may be aligned with the axis of the input shaft. The first CVT shaft (5) is coupled with the fixed input wheel (35), the second CVT shaft (6) is coupled with the first CVT shaft (5) and the output wheel (36) which is fixed to the output shaft (24) is coupled with the second CVT shaft.

Abstract: A continuously variable reversible transmission including an input shaft (2), a housing (1), an input arm (4), first and second CVT shafts (5.6), a fixed input wheel (35), a ratio selector mechanism, an overall output wheel (36) and an output shaft (24). The input arm (4) is fixed to the input shaft (2) and extends substantially perpendicular to the input shaft. At each end of the input arm, a first (5) and second (6) CVT shaft is rotatably mounted, with the axes of the CVT shafts extending parallel to the input shaft. The fixed input wheel (35) may be aligned with the axis of the input shaft. The first CVT shaft (5) is coupled with the fixed input wheel (35), the second CVT shaft (6) is coupled with the first CVT shaft (5) and the output wheel (36) which is fixed to the output shaft (24) is coupled with the second CVT shaft.