Patents by Inventor William D. Bevers

William D. Bevers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor

Patent number: 7556048

Abstract: A process for cleaning the silicon surface of a semiconductor device material layer. The surface undergoes a pre-clean process followed by exposure to a nitrogen-containing gas. A polysilicon layer is formed on the surface in the same chamber and at about the same temperature as the cleaning and nitrogen exposing steps.

Type: Grant

Filed: September 30, 2003

Date of Patent: July 7, 2009

Assignee: Agere Systems Inc.

Inventors: Leonard J. Olmer, Robert F. Jones, William D. Bevers, Edward P. Martin, Jr.
In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor

Publication number: 20040123882

Abstract: A process for cleaning the silicon surface of a semiconductor device material layer. The surface undergoes a pre-clean process followed by exposure to a nitrogen-containing gas. A polysilicon layer is formed on the surface in the same chamber and at about the same temperature as the cleaning and nitrogen exposing steps.

Type: Application

Filed: September 30, 2003

Publication date: July 1, 2004

Inventors: Leonard J. Olmer, Robert F. Jones, William D. Bevers, Edward P. Martin

In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor

In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor