Abstract: A system and method for simulating a mechanistic kinetic process, such as a chemical process including one or more chemical reactions, over a predetermined time period is provided. The simulation proceeds stochastically, by taking discrete time steps through the time period, and performing events (i.e., chemical reactions), based on the relationship between their probabilities of occurrence and the time steps taken. The system and method of the invention include means or method steps for detecting equilibrium conditions, in which a reaction moves forward and backward with a reaction probability which is high, relative to the probabilities of other reactions being simulated. When a reaction in equilibrium is detected, a probability calculation is made, based on the non-equilibrium reactions being simulated. Time steps are made, and events are simulated, based only on the non-equilibrium reactions.

Abstract: The present invention comprises a simulator including at least one data storage apparatus and at least one processor. The simulator further has a material property data group, a system state data group comprising geometrical data for defining a plurality of geometrical subvolumes and system condition data for each subvolume of a simulated system, an event probability data group including a plurality of event subgroups for uniquely identifying a set of events, event probabilities being associated with at least one of the geometrical subvolumes, and an event process data group including the time dependent process functions for all events which can occur in the system. These data groups and at least one functional-relationship link for correlating all of them are stored in the data storage apparatus. Thus, the material energy system can be represented by such data groups without requiring an explicit multiple dimension data structure.

Abstract: An optical data storage device having a substrate has guide ridges, or reverse grooves, in a concentric or spiral shape formed thereon, and disposed in a plane parallel to and disposed from the substrate surface. The device further has pits formed approximately midway between the guide ridges and disposed in the substrate and having bottoms below the plane of the substrate surface. A method for manufacturing the optical data storage device having both address pits and guide ridges is disclosed. A dual tone photosensitive material is applied to a substrate, exposed with a laser light source comprising two distinct wavelengths, and developed to provide a desired bipolar geometry thereon.

Abstract: The present invention relates to a radiation-sensitive resist composition and the process for its use in the manufacture of integrated circuits. The composition comprises a radiation-sensitive acid generator, a binder soluble in aqueous base and an acrylate copolymer having acid labile pendant groups.

Abstract: A new polymer family is shown for use in high sensitivity, high resolution photoresists. A liquid apply resist includes a polymer binder of t-butyl methacrylate/methylmethacrylate/methacrylic acid and an initiator which generates acid upon exposure to radiation.

Abstract: A composition including an initiator which generates acid upon exposure to radiation in the presence of a sensitizer. The composition may be mixed with an acid sensitive polymer or prepolymer to make a visible light or laser imageable photoresist. The sensitizer has phenylethynyl and methoxy substituents which, when properly positioned, allow it to utilize all of the visible argon ion laser lines.

Abstract: A new polymer family is shown for use in high speed photoresists. A dry film photoresist includes a polymer binder prepared from t-butyl methacrylate/methylmethacrylate/acrylic acid/ethyl acrylate and a suitable initiator.

Abstract: A process for making a self-aligned thin film transistor, said process comprising the steps of: (1) providing a gate which comprises a glass substrate, a transparent electrode on top thereof, and a metal electrode on top of said transparent electrode, (2) forming a stack by depositing over said gate a triple layer structure consisting of gate dielectric material, active material and a top passivating dielectric, (3) coating the top of said triple layer with a dual-tone photoresist, (4) exposing said photoresist from the top through a mask having transparent areas, opaque areas and areas transparent to selective wavelengths, using broad band UV light, (5) developing the photoresist by treatment with a solvent, (6) etching the stack with a liquid etchant through to the glass substrate, (7) exposing the photoresist from the bottom through the glass substrate using near UV light, (8) developing the photoresist with a solvent, and (9) etching off the top passivating layer of the stack.