Patents by Inventor William D. North

William D. North has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making reliable MOSFET device
    Patent number: 4028150
    Abstract: A substantial increase in the reliability of metal-oxide-semiconductor field effect transistor (MOSFET) devices having a thin gate dielectric is achieved by providing a thin film of phosphosilicate glass (PSG) on the thin dielectric and completely covering the PSG layer with the gate metallization. The metallization extends over a thick film of phosphosilicate glass which is disposed on the thick insulator covering the source and drain regions.
    Type: Grant
    Filed: February 9, 1976
    Date of Patent: June 7, 1977
    Assignee: IBM Corporation
    Inventors: Robert Henry Collins, Richard F. Levine, William D. North, Gerald D. O'Rourke, Gerald R. Parker
  • Reliable MOSFET device and method for making same
    Patent number: 4027321
    Abstract: A substantial increase in the reliability of metal-oxide-semiconductor field effect transistor (MOSFET) devices having a thin gate dielectric is achieved by providing a thin film of phosphosilicate glass (PSG) on the thin dielectric and completely covering the PSG layer with the gate metallization. The metallization extends over a thick film of phosphosilicate glass which is disposed on the thick insulator covering the source and drain regions.
    Type: Grant
    Filed: April 29, 1976
    Date of Patent: May 31, 1977
    Assignee: IBM Corporation
    Inventors: Robert Henry Collins, Richard F. Levine, William D. North, Gerald D. O'Rourke, Gerald R. Parker