Patents by Inventor William D. Powell, Jr.

William D. Powell, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures
    Patent number: 4985373
    Abstract: Insulation between first and second levels of aluminum metallization in semiconductor integrated circuit structures comprises a plasma planarized, deposited silicon dioxide layer and another silicon dioxide layer deposited upon said plasma planarized layer.
    Type: Grant
    Filed: May 24, 1989
    Date of Patent: January 15, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Hyman J. Levinstein, William D. Powell, Jr., Ashok K. Sinha