Patents by Inventor William D. Sawyer
William D. Sawyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11327102Abstract: Aspects are generally directed to a compact and low-noise electric field detector, methods of operation, and methods of production thereof. In one example, an electric field detector includes a proof mass, a source of concentrated charge coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The electric field detector further includes a sense electrode disposed on the substrate within the substrate offset space and proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received electric field at the source of concentrated charge. The electric field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the electric field based on the measured change in capacitance.Type: GrantFiled: August 25, 2020Date of Patent: May 10, 2022Assignee: THE CHARLES STARK DRAPER LABORATORY, INC.Inventors: James A. Bickford, Stephanie Lynne Golmon, Paul A. Ward, William D. Sawyer, Marc Steven Weinberg, John J. Le Blanc, Louis Kratchman, James S. Pringle, Jr., Daniel K. Freeman, Amy Duwel, Max Lindsay Turnquist, Ronald Steven McNabb, Jr., William A. Lenk
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Publication number: 20200386803Abstract: Aspects are generally directed to a compact and low-noise electric field detector, methods of operation, and methods of production thereof. In one example, an electric field detector includes a proof mass, a source of concentrated charge coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The electric field detector further includes a sense electrode disposed on the substrate within the substrate offset space and proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received electric field at the source of concentrated charge. The electric field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the electric field based on the measured change in capacitance.Type: ApplicationFiled: August 25, 2020Publication date: December 10, 2020Inventors: James A. Bickford, Stephanie Lynne Golmon, Paul A. Ward, William D. Sawyer, Marc Steven Weinberg, John J. Le Blanc, Louis Kratchman, James S. Pringle, JR., Daniel K. Freeman, Amy Duwel, Max Lindsay Turnquist, Ronald Steven McNabb, JR., William A. Lenk
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Patent number: 10859620Abstract: Aspects are generally directed to a compact and low-noise electric field detector, methods of operation, and methods of production thereof. In one example, an electric field detector includes a proof mass, a source of concentrated charge coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The electric field detector further includes a sense electrode disposed on the substrate within the substrate offset space and proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received electric field at the source of concentrated charge. The electric field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the electric field based on the measured change in capacitance.Type: GrantFiled: April 3, 2018Date of Patent: December 8, 2020Assignee: THE CHARLES STARK DRAPER LABORATORY, INC.Inventors: James A. Bickford, Stephanie Lynne Golmon, Paul A. Ward, William D. Sawyer, Marc S. Weinberg, John J. LeBlanc, Louis Kratchman, James S. Pringle, Jr., Daniel Freeman, Amy Duwel, Max Lindsay Turnquist, Ronald Steven McNabb, Jr., William A. Lenk
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Publication number: 20180292470Abstract: Aspects are generally directed to a compact and low-noise magnetic field detector, methods of operation, and methods of production thereof. In one example, a magnetic field detector includes a proof mass, a magnetic dipole source coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The magnetic field detector further includes a sense electrode disposed on the substrate within the substrate offset space and positioned proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received magnetic field at the magnetic dipole source. The magnetic field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the magnetic field based on the measured change in capacitance.Type: ApplicationFiled: April 3, 2018Publication date: October 11, 2018Inventors: James A. Bickford, Stephanie Lynne Golmon, Paul A. Ward, William D. Sawyer, Marc S. Weinberg, John J. LeBlanc, Louis Kratchman, James S. Pringle, JR., Daniel Freeman, Amy Duwel, Max Lindsay Turnquist, Ronald Steven McNabb, JR., William A. Lenk
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Publication number: 20180284175Abstract: Aspects are generally directed to a compact and low-noise electric field detector, methods of operation, and methods of production thereof. In one example, an electric field detector includes a proof mass, a source of concentrated charge coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The electric field detector further includes a sense electrode disposed on the substrate within the substrate offset space and proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received electric field at the source of concentrated charge. The electric field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the electric field based on the measured change in capacitance.Type: ApplicationFiled: April 3, 2018Publication date: October 4, 2018Inventors: James A. Bickford, Stephanie Lynne Golmon, Paul A. Ward, William D. Sawyer, Marc S. Weinberg, John J. LeBlanc, Louis Kratchman, James S. Pringle, JR., Daniel Freeman, Amy Duwel, Max Lindsay Turnquist, Ronald Steven McNabb, JR., William A. Lenk
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Patent number: 9039976Abstract: A MEMS sensor includes at least one closed nodal anchor along a predetermined closed nodal path on at least one surface of a resonant mass. The resonant mass may be configured to resonate substantially in an in-plane contour mode. Drive and/or sense electrodes may be disposed within a cavity formed at least in part by the resonant mass, the closed nodal anchor, and a substrate.Type: GrantFiled: January 31, 2011Date of Patent: May 26, 2015Assignee: Analog Devices, Inc.Inventors: Andrew Sparks, William D. Sawyer
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Patent number: 8809135Abstract: A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.Type: GrantFiled: February 1, 2010Date of Patent: August 19, 2014Assignee: The Charles Stark Draper Laboratory, Inc.Inventor: William D. Sawyer
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Patent number: 8631700Abstract: A method and apparatus for sensing movement resonates a primary member in a flexure mode at a given frequency, thus causing the primary member to have top and bottom portions that resonate at substantially about zero Hertz. The method also secures the bottom portion to a first substrate, and mechanically constrains the top portion while resonating in the flexure mode to substantially eliminate vibrations in the top portion. Finally, the method generates a changing capacitance signal in response to movement of the primary member. When generating this changing capacitance signal, the primary member resonates in a bulk mode at a given frequency.Type: GrantFiled: November 5, 2010Date of Patent: January 21, 2014Assignee: Analog Devices, Inc.Inventors: Firas N. Sammoura, William D. Sawyer
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Publication number: 20120195797Abstract: A MEMS sensor includes at least one closed nodal anchor along a predetermined closed nodal path on at least one surface of a resonant mass. The resonant mass may be configured to resonate substantially in an in-plane contour mode. Drive and/or sense electrodes may be disposed within a cavity formed at least in part by the resonant mass, the closed nodal anchor, and a substrate.Type: ApplicationFiled: January 31, 2011Publication date: August 2, 2012Applicant: ANALOG DEVICES, INC.Inventors: Andrew Sparks, William D. Sawyer
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Publication number: 20120111112Abstract: A method and apparatus for sensing movement resonates a primary member in a flexure mode at a given frequency, thus causing the primary member to have top and bottom portions that resonate at substantially about zero Hertz. The method also secures the bottom portion to a first substrate, and mechanically constrains the top portion while resonating in the flexure mode to substantially eliminate vibrations in the top portion. Finally, the method generates a changing capacitance signal in response to movement of the primary member. When generating this changing capacitance signal, the primary member resonates in a bulk mode at a given frequency.Type: ApplicationFiled: November 5, 2010Publication date: May 10, 2012Applicant: ANALOG DEVICES, INC.Inventors: Firas N. Sammoura, William D. Sawyer
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Publication number: 20110001198Abstract: A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.Type: ApplicationFiled: February 1, 2010Publication date: January 6, 2011Inventor: William D. Sawyer
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Patent number: 7655538Abstract: A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.Type: GrantFiled: September 19, 2007Date of Patent: February 2, 2010Assignee: The Charles Stark Draper Laboratory, Inc.Inventor: William D. Sawyer
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Patent number: 7381630Abstract: A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.Type: GrantFiled: July 13, 2004Date of Patent: June 3, 2008Assignee: The Charles Stark Draper Laboratory, Inc.Inventor: William D. Sawyer
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Patent number: 7335527Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.Type: GrantFiled: September 20, 2005Date of Patent: February 26, 2008Inventors: William D. Sawyer, Jeffrey T. Borenstein
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Patent number: 7172919Abstract: A method for reducing errors in a tuning fork gyroscope includes determining a first distance, gt, between an upper sense plate and a proof mass and a second distance, gb, between a lower sense plate and the proof mass. The method further includes applying a first voltage, Vt, to the upper sense plate and a second voltage, Vb, to the lower sense plate, wherein the ratio of the first voltage and the second voltage is a function of the first distance and the second distance.Type: GrantFiled: October 20, 2004Date of Patent: February 6, 2007Assignee: The Charles Stark Draper Laboratory, Inc.Inventors: Marc S. Weinberg, Anthony S. Kourepenis, William D. Sawyer, Jeffrey T. Borenstein, James H. Connelly, Amy E. Duwel, Christopher M. Lento, James R. Cousens
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Patent number: 6946314Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.Type: GrantFiled: August 15, 2003Date of Patent: September 20, 2005Assignee: The Charles Stark Draper Laboratory, Inc.Inventors: William D. Sawyer, Jeffrey T. Borenstein
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Patent number: 6862934Abstract: A tuning fork gyroscope typically including at least one proof mass with an upper sense plate disposed above the proof mass and a lower sense plate disposed below the proof mass and means for sensing changes in the nominal gaps between the sense plate and the proof mass and for outputting a signal indicative of the gyroscope angular rate.Type: GrantFiled: October 4, 2002Date of Patent: March 8, 2005Assignee: The Charles Stark Draper Laboratory, Inc.Inventors: Marc S. Weinberg, Anthony S. Kourepenis, William D. Sawyer, Jeffrey T. Borenstein, James H. Connelly, Amy E. Duwel, Christopher M. Lento, James R. Cousens
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Publication number: 20040102021Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.Type: ApplicationFiled: August 15, 2003Publication date: May 27, 2004Inventors: William D. Sawyer, Jeffrey T. Borenstein
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Publication number: 20030066351Abstract: A tuning fork gyroscope typically including at least one proof mass with an upper sense plate disposed above the proof mass and a lower sense plate disposed below the proof mass and means for sensing changes in the nominal gaps between the sense plate and the proof mass and for outputting a signal indicative of the gyroscope angular rate.Type: ApplicationFiled: October 4, 2002Publication date: April 10, 2003Inventors: Marc S. Weinberg, Anthony S. Kourepenis, William D. Sawyer, Jeffrey T. Borenstein, James H. Connelly, Amy E. Duwel, Christopher M. Lento, James R. Cousens
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Patent number: 5263084Abstract: An enhanced telephony call waiting feature is provided wherein identifying information related to a third party wishing to converse with a first party already engaged in a conversation with a second party is spontaneously provided to the first party. The method comprises the steps of the local office sending a call waiting tone having predetermined characteristics to the first party and its apparatus responding thereto by muting its associated handset for a predetermined interval of time. The local office then transmits the identification data relating to the third party and the first party apparatus receives and displays to the first party the identification information related to the third party thereby allowing the first party to either accept or reject the waiting call in the conventional manner but also based on the displayed information.Type: GrantFiled: July 22, 1991Date of Patent: November 16, 1993Assignee: Northern Telecom LimitedInventors: Guy J. Chaput, Suzanne D. White, Dana A. Merrill, William D. Sawyer, Lester L. White