Patents by Inventor William David Brown

William David Brown has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FABRICATION OF LARGE GRAIN POLYCRYSTALLINE SILICON FILM BY NANO ALUMINUM-INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON
    Publication number: 20110189841
    Abstract: One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
    Type: Application
    Filed: April 11, 2011
    Publication date: August 4, 2011
    Applicant: BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS
    Inventors: Min Zou, Li Cai, William David Brown
  • Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
    Patent number: 7927937
    Abstract: One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
    Type: Grant
    Filed: February 10, 2010
    Date of Patent: April 19, 2011
    Assignee: Board of Trustees of the University of Arkansas
    Inventors: Min Zou, Li Cai, William David Brown
  • FABRICATION OF LARGE GRAIN POLYCRYSTALLINE SILICON FILM BY NANO ALUMINUM-INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON
    Publication number: 20100139563
    Abstract: One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
    Type: Application
    Filed: February 10, 2010
    Publication date: June 10, 2010
    Applicant: BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS
    Inventors: Min ZOU, Li CAI, William David BROWN
  • Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
    Patent number: 7687334
    Abstract: One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: March 30, 2010
    Assignee: Board of Trustees of the University of Arkansas
    Inventors: Min Zou, Li Cai, William David Brown
  • Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
    Publication number: 20070224788
    Abstract: One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
    Type: Application
    Filed: March 23, 2007
    Publication date: September 27, 2007
    Applicant: Board of Trustees of the University of Arkansas
    Inventors: Min Zou, Li Cai, William David Brown