Abstract: A platen assembly includes a base and a clamping layer fixed to the base. A portion of the base that faces the clamping layer and a portion of the clamping layer that faces the base define a gap between the base and the clamping layer. The gap is configured to circulate a fluid during a first operating mode and provide a thermal break during a second operating mode. The platen assembly is capable of operating over a wide temperature range.

Abstract: An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shields is disposed exterior to the chamber. The heat shields are made of high temperature and/or refractory material designed to reflect heat back toward the ion source. In a first position, these heat shields are disposed to reflect a first amount of heat back toward the ion source. In a second position, these heat shields are disposed to reflect a lesser second amount of heat back toward the ion source. In some embodiments, the heat shields may be disposed in one or more intermediate positions, located between the first and second positions.

Abstract: A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.

Abstract: A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.

Abstract: An improved method of etching a metal substrate is described. After a mask layer is applied to the metal substrate, an ion implantation process is performed which implants ions, such as oxygen ions, into the exposed regions of the metal substrate. This implantation creates regions of metal oxide, which may be more susceptible to etching. Afterwards, the exposed regions of metal oxide are subjected to an etching process. This process may be through vaporization or may be a wet etch process. In some embodiments, the etchant is selected so that the metal oxide binds with the etchant to form a volatile compound, which stays in the vapor or gaseous state. This may reduce the unwanted deposition of the metal to other surfaces. These ion implantation and etching processes may be repeated a plurality of times to create a recessed feature of the desired depth.

Abstract: An ion implantation system, having a temperature controlled ion source chamber is disclosed. The temperature of the ion source chamber is regulated by disposing a heat sink in proximity to the ion source chamber. A gas fillable chamber is disposed between and in physical communication with both the ion source chamber and the heat sink. By controlling the amount of gas, i.e. the gas pressure, within the gas fillable chamber, the coefficient of heat transfer can be manipulated. This allows the temperature of the ion source chamber to be controlled through the application or removal of gas from the gas fillable chamber. This independent temperature control decouples the power used to heat the ion generator from the ion species that are ultimately generated.

Abstract: An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shields is disposed exterior to the chamber. The heat shields are made of high temperature and/or refractory material designed to reflect heat back toward the ion source. In a first position, these heat shields are disposed to reflect a first amount of heat back toward the ion source. In a second position, these heat shields are disposed to reflect a lesser second amount of heat back toward the ion source. In some embodiments, the heat shields may be disposed in one or more intermediate positions, located between the first and second positions.

Abstract: A platen having different grounding structures is disclosed. Different grounding structures, such as pins, flat-end posts and mushroom-shaped grounding structures, may be disposed on the surface of a platen. Each type of grounding structure may be advantageously used with a particular type of workpiece. In one embodiment, all of the different grounding structures are mechanically biased upward, such as by springs, from the surface of the platen such that all may contact the back surface of a workpiece disposed on the platen. In another embodiment, one or more actuators are used to lift and lower subsets of the grounding structures such that only a subset of the grounding structures contacts the back surface of the workpiece. These subsets may be all a single type of grounding structure, or may be associated with a particular type of workpiece.

Abstract: A plasma separator and mass filter system is described. In some aspects the system is designed and configured to cause a plasma in a vacuum chamber and to move charged particles therein axially and circumferentially towards one or more sets of collectors. Waste material is ejected from the system while the one or more collectors yield one or more corresponding products.

Abstract: An electrostatic clamping system provides an electrostatic clamp (ESC) having a clamping surface, and a first and second pair of electrodes. Each of the first pair of electrodes are associated with a respective one-third of the clamping surface, and each of the second pair of electrodes are associated with a respective one-sixth of the clamping surface. A peripheral region of each of the first and second pairs of electrodes tapers in width toward the periphery of the clamping surface in a spiral. A power supply selectively outputs a DC and a three-phase AC clamping voltage. A controller selectively operates the ESC in a DC mode and an AC mode. The DC mode connects one of the first pair of electrodes and one of the second pair of electrodes to a positive terminal and the other one of the first pair of electrodes and other one of the second pair of electrodes to a negative terminal of the power supply.

Abstract: An electrostatic clamping system has an electrostatic chuck having one or more electrodes and a clamping surface and one or more fluid passages therethrough. A plurality of fluid sources has a respective plurality of fluids associated therewith, wherein each of the plurality of fluids are chemically distinct from one another and has a respective viable fluid temperature range associated therewith. A thermal unit is configured to heat and/or cool the plurality of fluids to one or more predetermined temperature setpoints. A valve assembly is configured to selectively fluidly couple each of the plurality of fluid sources to the one or more fluid passages of the electrostatic chuck. A controller is also configured to selectively fluidly couple the one or more fluid passages of the electrostatic chuck with a selected one or more of the plurality of fluid sources via a control of the valve assembly.

Abstract: A workpiece support has a vessel having a top interior wall and a bottom interior wall. An interior cavity is defined between the top interior wall and bottom interior wall, wherein a support surface configured to support a workpiece. A plate is positioned within the interior cavity, dividing the interior cavity into a top cavity and a bottom cavity. The top and bottom cavities are fluidly coupled about a periphery of the plate. A first taper defined in one or more of the top interior wall and a top portion of the plate provides a substantially constant volume across a radial cross-section of the top cavity. A second taper defined in one or more of the bottom interior wall and a bottom portion of the plate provides a substantially constant volume across a radial cross-section of the bottom cavity. First and second ports fluidly couple the top and bottom cavities to respective first and second fluid channels.

Abstract: A workpiece carrier comprises a first plate having a first outer diameter, a first inner diameter, and a first recess extending a first distance from the first inner diameter toward the first outer diameter. The workpiece carrier further comprises a second plate having a second outer diameter, a second inner diameter, and a second recess extending a second distance from the second inner diameter toward the second outer diameter. A plurality of mating features associated with the first plate and second plate are configured to selectively fix a position of a first workpiece between the first plate and second plate within the first recess and second recess.

Abstract: An ion implantation system, having a temperature controlled ion source chamber is disclosed. The temperature of the ion source chamber is regulated by disposing a heat sink in proximity to the ion source chamber. A gas fillable chamber is disposed between and in physical communication with both the ion source chamber and the heat sink. By controlling the amount of gas, i.e. the gas pressure, within the gas fillable chamber, the coefficient of heat transfer can be manipulated. This allows the temperature of the ion source chamber to be controlled through the application or removal of gas from the gas fillable chamber. This independent temperature control decouples the power used to heat the ion generator from the ion species that are ultimately generated.

Abstract: An electrostatic clamp is provided, having a clamping plate, wherein a clamping surface of the clamping plate is configured to contact the workpiece. A voltage applied to one or more electrodes selectively electrostatically attracts the workpiece to the clamping surface. One or more auxiliary clamping members are further provided wherein the one or more auxiliary clamping members are configured to selectively secure at least a portion of the workpiece to the clamping surface. A temperature monitoring device configured to determine a temperature of the workpiece is provided, and a controller is configured to selectively clamp the workpiece to the clamping surface via a control of the voltage to the one or more electrodes and the one or more auxiliary clamping members, based, at least in part, on the temperature of the workpiece.

Abstract: A workpiece carrier comprises a first plate having a first outer diameter, a first inner diameter, and a first recess extending a first distance from the first inner diameter toward the first outer diameter. The workpiece carrier further comprises a second plate having a second outer diameter, a second inner diameter, and a second recess extending a second distance from the second inner diameter toward the second outer diameter. A plurality of mating features associated with the first plate and second plate are configured to selectively fix a position of a first workpiece between the first plate and second plate within the first recess and second recess.

Abstract: A clamping device and method is provided for securing first and second workpieces having different sizes to a clamping device and providing thermal conditioning thereto. An electrostatic clamping plate having a diameter associated with the first workpiece surrounds a central portion of the clamp. A non-electrostatic central portion provides a heater within the annulus, wherein the central portion has a diameter associated with the second workpiece. A workpiece carrier is provided, wherein the workpiece carrier is configured to hold the second workpiece above the heater, and wherein a diameter of the workpiece carrier is associated with the electrostatic clamping plate annulus. The annulus selectively electrostatically clamps the workpiece carrier or a circumferential portion of the first workpiece to its clamping surface, therein selectively maintaining a position of the first or second workpiece with respect to the annulus or non-electrostatic central portion.

Abstract: An electrostatic clamp monitoring system is provided having an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface associated therewith via one or more electrodes. A power supply is electrically coupled to the electrostatic clamp, wherein the power supply is configured to selectively supply a clamping voltage to the one or more electrodes of the electrostatic clamp. A data acquisition system is coupled to the power supply and configured to measure a current supplied to the one or more electrodes, therein defining a measured current. A controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp.

Abstract: A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis.

Abstract: Methods for implanting an silaborane molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing silaborane molecule in an ion source to create a plasma and produce silaborane molecules and its ionized lower mass byproducts. The ionized silaborane molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized silaborane molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.