Abstract: A new system and method for measuring RDSon, RDSoff and current collapse on semiconductor devices is provided. The system and method operate by measuring the current flow through the transistor, instead of measuring the voltage across the device under test. The viewing resistor gives us an accurate picture of the RDSon, RDSoff and current collapse recovery curve because it is on the same current path as the device under test.

Abstract: A new system and method for measuring RDSon, RDSoff and current collapse on semiconductor devices is provided. The system and method operate by measuring the current flow through the transistor, instead of measuring the voltage across the device under test. The viewing resistor gives us an accurate picture of the RDSon, RDSoff and current collapse recovery curve because it is on the same current path as the device under test.

Abstract: A non-intrusive flow measurement and detection device is provided. The device includes a first transducer; a second transducer; and detection/reporting circuitry coupled to the first and second transducers. The non-intrusive flow measurement and detection device is mounted to a pipe or conduit with the first and second transducers in contact with an outer surface of the pipe or conduit. The first transducer detects and measures vibration in the pipe or conduit in response to gas or liquid flowing through the pipe or conduit. The second transducer detects and measures sound in the pipe or conduit in response to gas or liquid flowing through the pipe or conduit. The detection/reporting circuitry compares the measured flow and flow rate determined by the first and second transducers with established limits to determine if the flow and flow rate is within the established limits.