Patents by Inventor William E. Guthrie
William E. Guthrie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11886166Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information including the dosages for the plurality of pixels in the area. An increase in dosage for at least one pixel in a plurality of pixels in the sub area is determined, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area.Type: GrantFiled: February 14, 2023Date of Patent: January 30, 2024Assignee: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Publication number: 20230386784Abstract: Methods and systems for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose may be calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.Type: ApplicationFiled: August 3, 2023Publication date: November 30, 2023Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Patent number: 11756765Abstract: Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.Type: GrantFiled: June 17, 2021Date of Patent: September 12, 2023Assignee: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Publication number: 20230205177Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information including the dosages for the plurality of pixels in the area. An increase in dosage for at least one pixel in a plurality of pixels in the sub area is determined, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area.Type: ApplicationFiled: February 14, 2023Publication date: June 29, 2023Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Publication number: 20230124768Abstract: Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose is calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.Type: ApplicationFiled: December 19, 2022Publication date: April 20, 2023Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Patent number: 11604451Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.Type: GrantFiled: March 24, 2021Date of Patent: March 14, 2023Assignee: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Patent number: 11592802Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.Type: GrantFiled: December 28, 2020Date of Patent: February 28, 2023Assignee: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
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Publication number: 20210313143Abstract: Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.Type: ApplicationFiled: June 17, 2021Publication date: October 7, 2021Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Patent number: 11062878Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes determining a local pattern density for the area of the pattern based on an original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PLC maximum dose.Type: GrantFiled: July 21, 2020Date of Patent: July 13, 2021Assignee: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
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Publication number: 20210208569Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.Type: ApplicationFiled: March 24, 2021Publication date: July 8, 2021Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, Abhishek Shendre, William E. Guthrie, Ryan Pearman
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Publication number: 20210116884Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.Type: ApplicationFiled: December 28, 2020Publication date: April 22, 2021Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
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Patent number: 10884395Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.Type: GrantFiled: December 22, 2018Date of Patent: January 5, 2021Assignee: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
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Publication number: 20200373122Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes determining a local pattern density for the area of the pattern based on an original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PLC maximum dose.Type: ApplicationFiled: July 21, 2020Publication date: November 26, 2020Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
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Patent number: 10748744Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes inputting an original set of exposure information for the area and inputting a target post-proximity effect correction (PEC) maximum dose. A local pattern density is calculated for the area of the pattern based on the original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PEC maximum dose.Type: GrantFiled: May 24, 2019Date of Patent: August 18, 2020Assignee: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
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Publication number: 20200201286Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.Type: ApplicationFiled: December 22, 2018Publication date: June 25, 2020Applicant: D2S, Inc.Inventors: Akira Fujimura, Harold Robert Zable, Nagesh Shirali, William E. Guthrie, Ryan Pearman
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Patent number: 6823294Abstract: A method is provided for quantifying circuit design complexity. Conclusions regarding the time and effort to implement a circuit design are thereby derived and historical and predictive analyses prepared. Common circuit design parameters are determined using a computer-implemented Normalization Method. In the Normalization Method, the effort required to implement circuitry is quantified by evaluating each one of a set of complexity factors. The total transistor count of a circuit is then adjusted according to these complexity factors to produce a “normalized transistor” count. Design characteristics or factors that influence complexity are identified from among raw data in a database of integrated circuit design project data. These factors are then incorporated into a Normalization Equation such that normalized transistor count is a statistically significant predictor of required design project effort.Type: GrantFiled: July 20, 1999Date of Patent: November 23, 2004Assignee: Collett International, Inc.Inventor: William E. Guthrie