Abstract: A cable used for transmitting the signals of a communications bus, such as a SCSI bus, having arbitration control signals subject to a wired-or glitch--such as the SCSI BSY signal. Low characteristic impedence conductors ensure that voltage reflections resulting from the deassertion of the BSY signal do not exceed a minimum threshold signal assertion voltage, allowing an increase in the maximum length of the SCSI bus cable.

Abstract: A cable used for transmitting the signals of a communications bus, such as a SCSI bus, having arbitration control signals subject to a wired-or glitch--such as the SCSI BSY signal. High propagation speed conductors increase the propagation speed of the BSY signal, resulting in a proportionate increase in the maximum length of the SCSI bus cable while maintaining adherence with the SCSI bus timing specifications.

Abstract: A novel process is described for the removal of the objectionable point (tilt projection, appearing at the top of a silicon island). The process includes the formation of a thick insulating layer on the top surface of the island, etching the top and sides of the insulating layer to expose, at the least, the objectionable point and, thereafter, etching the objectionable point to produce a rounded edge.

Abstract: The image transfer process in integrated circuit (IC) processes such as large scale integrated (LSI) device process manufacturing is monitored by optical measurements on a stage-by-stage basis by measuring a monitor specimen or test sample formed with a diffraction grating of a predetermined pattern having a strip width corresponding to the desired line widths of the wafers or masks being monitored. A beam of monochromatic light is scanned over the test sample to generate diffracted beams of various orders. Line width, line depth, line edge profile process errors can be determined by various combinations of the diffracted beams of the zero, first, second, etc., orders. The test sample is scanned to generate a display for data representing the diffracted beams. The parameter data can be stored for later use for quality control, process monitoring, circuit design parameters, and the like. Moreover, gross process errors are visually discernible on the monitor specimen.

Abstract: A monolithic semiconductor-on-insulator device includes silicon islands in spaced relation on the surface of an insulating substrate, with the spaces between the islands occupied by a passivating material which comprises a layer of a semi-insulating material having finite but low conductivity on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof. The surface of the semi-insulating material has a layer of insulating silicon dioxide thereon. The conductivity of the semi-insulating material is such that charge does not accumulate in this material adjacent to the side edges of the islands, but its conductivity is low enough so that leakage currents between devices remain below an amount which would render the circuit which uses the device non-operative.

Abstract: A method for protecting electronic circuitry formed on the obverse side of a wafer from flying debris produced either by the mechanical or laser scribing or scoring of the wafer and during separation. The device is provided with a layer of abrasion resistant material on the circuit side of the wafer and the scribing or scoring is done on the obverse side of the wafer. The cracking operation is performed by applying pressure to the wafer in such a manner as to have the reverse side in tension and the obverse or circuit side in compression in order to prevent any debris which may have been cast up during the scribing or scoring operation from contaminating or damaging the circuit side of the wafer while any debris cast up during the breaking operation is thrown away from the obverse or circuit side.

Abstract: A semiconductor wafer is cleansed of loose foreign surface matter and chemical impurities near the surface in an apparatus which passes superheated steam over the wafer. Condensate is permitted to form and drip off the wafer. After rising above 100.degree. C. the wafer becomes dry, and is removed from the apparatus and then permitted to cool.