Abstract: A machine has been developed for photoresist processing which has two filtered upward flowing baths, one for the develop fluid and one for the rinse fluid. In order to be able to develop photoresist patterns with submicron geometries, it is necessary to retreat from the current method of developing on a conventional spin developer. The batch immersion develop would suffice in certain applications, but contamination and automation obstacles cannot be overcome with the batch immersion process. Also, the develop process cannot be accomplished on very small geometries which developing pattern side up due to ununiform developing across the wafer causing critical dimension sizing problems. The described concept utilized an upside down immersion process with automated in line capabilities. It requires a filtered bubble free, temperature controlled, slow upward flowing develop chemical which the wafer is immersed into while spinning very slowly.

Abstract: A method of processing semiconductor wafers to develop photoresist patterns which includes mounting a semiconductor on a vacuum chuck, immersing and spinning the semiconductor wafer in a developer fluid, removing the semiconductor wafer from the semiconductor wafer from the developer fluid, lowering the semiconductor wafer into the rinse bath, then removing the semiconductor wafer from the rinse bath and spin drying it.