Patents by Inventor William E. Quinn

William E. Quinn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5525810
    Abstract: A solid-state scanner for reading bar codes or projecting images is described. The scanner operates either in a reading mode or a calibrate mode using the same hardware. Use of two-dimensional array light sources minimizes the size of the semiconductor chips containing the light source arrays is provided. Use of oversampling or anamorphic optical systems increase tolerances to angular misorientations is also discussed. Used in conjunction with a mechanical scanning device, the scanner is capable of reading two-dimensional bar codes or generating two-dimensional images.
    Type: Grant
    Filed: May 9, 1994
    Date of Patent: June 11, 1996
    Assignee: Vixel Corporation
    Inventors: Jack L. Jewell, Robert P. Bryan, Winston S. Fu, Stan E. Swirhun, William E. Quinn
  • Patent number: 5500540
    Abstract: A package and method for packaging optoelectronic or electronic components is provided in which multiple chip regions are packaged simultaneously prior to sectioning of the wafer into chips. The method and package allows micro-optic and other package elements to be integrated onto wafers on the same face as the optoelectronic or electronic devices without inhibiting the ability to make electrical contact to the devices. The package elements may be integrated to the wafer by material deposition, by spinning, or by physical mounting.
    Type: Grant
    Filed: April 15, 1994
    Date of Patent: March 19, 1996
    Assignee: Photonics Research Incorporated
    Inventors: Jack L. Jewell, William E. Quinn, Stan E. Swirhun, Robert P. Bryan
  • Patent number: 5302847
    Abstract: A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As-P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.
    Type: Grant
    Filed: June 4, 1993
    Date of Patent: April 12, 1994
    Assignee: Bell Communications Research, Inc.
    Inventors: Rajaram Bhat, Maria J. S. P. Brasil, Robert E. Nahory, William E. Quinn, Maria C. Tamargo
  • Patent number: 5246878
    Abstract: A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As--P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.
    Type: Grant
    Filed: March 27, 1992
    Date of Patent: September 21, 1993
    Assignee: Bell Communications Research, Inc.
    Inventors: Rajaram Bhat, Maria J. S. P. Brasil, Robert E. Nahory, William E. Quinn, Maria C. Tamargo
  • Patent number: 5206706
    Abstract: Alignment method and procedure for accurately determining the off-normal angle of incidence of an optical beam with a sample, for example, in ellipsometry. A diffraction grating is fabricated with a grating period chosen such that, when a laser beam irradiates the grating placed at the sample area, a beam is diffracted generally along the incoming laser beam. The laser is then angularly moved with respect to the grating until the two beams are auto-collimated, i.e., made coincident. The angle of incidence is then accurately determined from the laser wavelength and the grating period through well known equations.
    Type: Grant
    Filed: July 1, 1991
    Date of Patent: April 27, 1993
    Assignee: Bell Communications Research, Inc.
    Inventor: William E. Quinn
  • Patent number: 5091320
    Abstract: A method and apparatus for controlling the growth of a multispecies film. During the film growth, an ellipsometer continuously monitors the surface on which the film is growing. The ellipsometer data is used to calculate the effective complex dielectric constant of the thin-film/substrate structure. A sequence of such data is used in a model calculation to determine the composition of the top portion of the thin film. The measured composition is compared with the target composition and the amount supplied of one of the species is correspondingly changed.
    Type: Grant
    Filed: June 15, 1990
    Date of Patent: February 25, 1992
    Assignee: Bell Communications Research, Inc.
    Inventors: David E. Aspnes, William E. Quinn
  • Patent number: 4885186
    Abstract: A method for the preparation of silicate glasses of controlled index of refraction involves the thermal and/or plasma processing of organo-silicon polymers. Compositions so treated evidence a suppressed index of refraction which may subsequently be increased by sintering to yield a material uniquely suited for use in fiber optic devices.
    Type: Grant
    Filed: December 29, 1988
    Date of Patent: December 5, 1989
    Assignee: Bell Communications Research, Inc.
    Inventors: Brian G. Bagley, William E. Quinn
  • Patent number: 4835057
    Abstract: A silica fiber coated with an organosilsesquioxane polymer guide light and evidences excellent mechanical integrity under adverse conditions of temperature and humidity. The polymer serves as a suitable coating and cladding for silica-based fibers designed for low fabrication cost fiber optic applications, as a replacement for plastic coatings on silica-based fibers, and as a water barrier for fiber applications in humid environments. The polymeric material described evidences characteristics which are superior for both polymeric coatings (acrylate) and claddings (linear siloxanes).
    Type: Grant
    Filed: March 25, 1987
    Date of Patent: May 30, 1989
    Assignees: AT&T Bell Laboratories, AT&T Bell Laboratories
    Inventors: Brian G. Bagley, Charles R. Kurkjian, William E. Quinn