Abstract: A charge coupled device (CCD) is disclosed which has a semiconductor body (20) comprising polymer or oligomer semiconductor material in place of the conventional silicon. A back electrode (22) of the device is electrically coupled to the semi-conductor body through a Schottky junction, reducing the availability of holes in the semiconductor body. Shift electrodes forming a shift register are driven by negative electrical potentials and accumulations of holes in p type semiconductor material represent data.

Abstract: A charge coupled device (CCD) is disclosed which has a semiconductor body (20) comprising polymer or oligomer semiconductor material in place of the conventional silicon. A back electrode (22) of the device is electrically coupled to the semi-conductor body through a Schottky junction, reducing the availability of holes in the semiconductor body. Shift electrodes forming a shift register are driven by negative electrical potentials and accumulations of holes in p type semiconductor material represent data.

Abstract: A polymer-based or silicon-based accumulation type, depletion mode field effect transistor, suitable as a driver for load. Optionally, the load is another accumulation type, depletion mode field effect transistor. The transistor may be of the TFT type, either lateral or vertical. Optionally, it may have Schottky diode contacts to source and drain electrodes, possibly with a reverse biased Schottky junction, or it may have a negatively charged gate dielectric.

Abstract: A manufacture and methods are provided for a field emission cathode and field emission display comprising a conjugated polymer material. The manufacture of the invention comprises a conjugated polymer material, which may include substituted polythiophene, polyalkylthiophene, and poly-3-octylthiophene. A polymer material layer may be formed by distributing a conjugated polymer material and a solvent onto a substrate. The solvent may be evaporated under a vacuum. The polymer layer may be molded to include projections to promote field emission. Additionally, the polymer material may be doped with an electron donor material. Methods according to the invention include the steps of forming a polymer layer comprising conjugated polymer material on a substrate, distributing a polymer solution including a solvent onto the substrate, evaporating the substrate, and shaping the surface of the polymer layer by use of a mould.

Abstract: A method of fabricating an electronic component is disclosed in which an electrically conductive layer (4) is provided upon a substrate (2). A mask (6) having a window (8) is provided upon the layer and by etching, preferably chemically, through the window an opening (10) the conductive layer. Conductive material is deposited, preferably by vapor deposition, through the window to form an island in the opening. The etching of the conductive layer is carried out such that the conductive layer is undercut at the periphery of the window with the result that the periphery of the island is spaced apart from the periphery of the opening. Also disclosed is a thin film transistor structure well suited to fabrication by the above described method.

Abstract: An ionising radiation detector is disclosed which utilises a detector body (16) comprising polymer or oligomer semiconductor material. Means are provided for detecting electron/hole pairs formed in the detector body by ionising radiation and may comprise a pair of electrodes (4, 8) separated by the detector body.

Abstract: A method of fabricating an electronic component is disclosed in which an electrically conductive layer (4) is provided upon a substrate (2). A mask (6) having a window (8) is provided upon the conductive layer and by etching, preferably chemically, through the window an opening (10) is formed in the conductive layer. Conductive material is deposited, preferably by vapour deposition, through the window to form an island in the opening. The etching of the conductive layer is carried out such that the conductive layer is undercut at the periphery of the window with the result that the periphery of the island is spaced apart from the periphery of the opening. Also disclosed is a thin film transistor structure well suited to fabrication by the above described method.

Abstract: A method for activating superconducting material comprises generating a species of oxygen ions, heating the material and introducing the oxygen ions to said material by the application of a low-gradient drift field between the source of oxygen ions and a substrate including the superconducting material.