Abstract: A reference signal generator includes an integrated circuit substrate having a semiconductor resonator therein. The resonator includes an inductor extending adjacent a first surface of the integrated circuit substrate. A vertically-stacked composite of at least first and second electrically insulating dielectric layers is provided on the integrated circuit substrate. The vertically-stacked composite covers a portion of the first surface, which extends opposite the inductor. A first electrically conductive shielding layer is provided on a portion of the second electrically insulating dielectric layer extending opposite the inductor. The first electrically conductive shielding layer may encapsulate exposed portions of the first and second electrically insulating dielectric layers. The shielding layer may operate as an electromagnetic shield between the inductor and an external structure, such as an integrated circuit package, and also shield against environmental contamination (e.g.

Abstract: A diffusion self-aligned, short channel device may be fabricated by ion implantation of an n-type channel region within a p-type substrate. A p-type dopant is then implanted in and driven through a portion of the n-type channel region to form an impurity region. A diffusion self-aligned n-type channel region is then disposed in the p-type impurity region and in the n-type channel region. The method allows for the simultaneous fabrication of a channel implanted MOSFET as well as a standard MOSFET. The resulting diffusion self-aligned, short channel device is a high gain, high speed small device which can be simply combined and fabricated with channel-implanted depletion devices and low body effect devices in an integrated circuit.