Abstract: A low noise readout apparatus and method for CMOS image sensors having a complementary metal oxide semiconductor with a plurality of pixels, each pixel having a charge-generating unit configured to release a charge, a potential well for receiving the released charge from the charge-generating unit, a first gate, a second gate and a floating gate, in series and adjacent the potential well, the first gate transfers the charge from the potential well to the second gate, the second gate transfers the charge to the floating gate to generate a first corresponding readout voltage, the first gate, the second gate and the floating gate transfer the charge back and forth, at least once, to generate at least a second corresponding readout voltage, and a readout circuit coupled to the floating gate, the readout circuit measures a voltage corresponding to the charge transferred to the floating gate.

Abstract: A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator.