Abstract: An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

Abstract: An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

Abstract: A interposer sandwich structure comprises a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes means for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

Abstract: Selective electrical connections between an electronic component and a test substrate are made using an electrical conductive material. The conductive material of the present invention is a dissolvable material, allowing for rework and repair of a wafer at the wafer-level, and retesting at the wafer-level. In addition, the conductive material may also be used in a permanent package, since the conductive material of the present invention provides complete electrical conductivity and connection between the electronic component and the substrate.

Abstract: An aluminum or copper heat sink is attached to a ceramic cap or exposed semiconductor chip using an adhesive of silicone or flexible-epoxy adhesive. The aluminum may be coated by anodizing or chromate conversion or the copper may be coated with nickel or gold or chromium. Such structures are especially useful for flip chip attachment to flexible or rigid organic circuit boards or modules such as CQFP, CBGA, CCGA, CPGA, TBGA, PEGA, DCAM, MCM-L, and other chip carrier packages in which the back side of chips are connected directly to heat sinks. These adhesive materials withstand wet or dry thermal cycle tests of −65 to 1500° C. for 1,000 cycles and 85° C. and 85% relative humidity for 1000 hours while maintaining a tensile strenth of at least 500 psi. The adhesive contains materials having high thermal conductivity and a low coefficient of thermal expansion (CTE) in order to provide increased thermal performance.

Abstract: An aluminum or copper heat sink is attached to a ceramic cap or exposed semiconductor chip using an adhesive of silicon or flexible-epoxy adhesive. The aluminum may be coated by anodizing or Chromate conversion or the copper may be coated with nickel or gold Chromium. Such structures are especially useful for flip chip attachment to flexible or rigid organic circuit boards or modules such as CQFP, CBGA, CCGA, CPGA, TBGA, PBGA, DCAM, MCM-L, and other chip carrier packages in which the back side of chips are connected directly to heat sinks. These adhesive materials withstand wet or dry thermal cycle tests of -65 to 150.degree. C. for 1,000 cycles and 85.degree. C. and 85% relative humidity for 1000 hours while maintaining a tensile strenth of at least 500 psi. The adhesive contains materials having high thermal conductivity and a low coefficient of thermal expansion (CTE) in order to provide increased thermal performance and a CTE between that of the silicon metal die and the metal of the heat sink.

Abstract: An aluminum or copper heat sink is attached to a ceramic cap or exposed semiconductor chip using an adhesive of silicone or flexible-epoxy adhesive. The aluminum may be coated by anodizing or chromate conversion or the copper may be coated with nickel or gold on chromium. Such structures are especially useful for flip chip attachment to flexible or rigid organic circuit boards or modules such as CQFP, CBGA, CCGA, CPGA, TBGA, PBGA, DCAM, MCM-L, and other chip carrier packages in which the back side of chips are connected directly to heat sinks. These adhesive materials withstand wet or dry thermal cycle tests of -65.degree. to 150.degree. C. for 1,000 cycles and 85.degree. C. and 85% relative humidity for 1000 hours while maintaining a tensile strenth of at least 500 psi. The adhesive contains materials having high thermal conductivity and a low coefficient of thermal expansion (CTE) in order to provide increased thermal performance.