Abstract: A chamber top for a processing chamber is provided. The chamber top includes a first plasma source oriented horizontally over the chamber top and a second plasma source oriented horizontally over the chamber top. The second plasma source is arranged concentrically around the first plasma source. Also included is a first plurality of ferrites encircling the first plasma source and a second plurality of ferrites encircling the second plasma source. A first primary winding is disposed around an outer circumference of the first plasma source and a second primary winding disposed around an outer circumference of the second plasma source. The first and second primary windings pass through the respective plurality of ferrites. A plurality of outlets is disposed on a lower portion of the first and second plasma sources, and the plurality of outlets is oriented between adjacent ones of the first and second plurality of ferrites.

Abstract: A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.

Abstract: A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.