Abstract: Embodiments disclosed herein include an I/O module with multiple level shifters that establish a plurality of voltage domains. Using the level shifters, the I/O module converts data signals in a core logic voltage domain to data signals in an external voltage domain. In one embodiment, when transmitting data signals to an external device, the I/O module level shifts the data signals from a core logic voltage domain to a low voltage domain. The I/O module then level shifts the data signals from the low voltage domain to an intermediate voltage domain. The I/O module may further shift the data signals from the intermediate voltage domain to both a low voltage domain and a high voltage domain. Using the data signals from both of these domains, the I/O module outputs the data signals in a voltage domain corresponding to a communication technique used to transmit data to the external device.

Abstract: Embodiments disclosed herein include an I/O module with multiple level shifters that establish a plurality of voltage domains. Using the level shifters, the I/O module converts data signals in a core logic voltage domain to data signals in an external voltage domain. In one embodiment, when transmitting data signals to an external device, the I/O module level shifts the data signals from a core logic voltage domain to a low voltage domain. The I/O module then level shifts the data signals from the low voltage domain to an intermediate voltage domain. The I/O module may further shift the data signals from the intermediate voltage domain to both a low voltage domain and a high voltage domain. Using the data signals from both of these domains, the I/O module outputs the data signals in a voltage domain corresponding to a communication technique used to transmit data to the external device.

Abstract: Embodiments disclosed herein include an I/O module with multiple level shifters that establish a plurality of voltage domains. Using the level shifters, the I/O module converts data signals in a core logic voltage domain to data signals in an external voltage domain. In one embodiment, when transmitting data signals to an external device, the I/O module level shifts the data signals from a core logic voltage domain to a low voltage domain. The I/O module then level shifts the data signals from the low voltage domain to an intermediate voltage domain. The I/O module may further shift the data signals from the intermediate voltage domain to both a low voltage domain and a high voltage domain. Using the data signals from both of these domains, the I/O module outputs the data signals in a voltage domain corresponding to a communication technique used to transmit data to the external device.

Abstract: Embodiments disclosed herein include an I/O module with multiple level shifters that establish a plurality of voltage domains. Using the level shifters, the I/O module converts data signals in a core logic voltage domain to data signals in an external voltage domain. In one embodiment, when transmitting data signals to an external device, the I/O module level shifts the data signals from a core logic voltage domain to a low voltage domain. The I/O module then level shifts the data signals from the low voltage domain to an intermediate voltage domain. The I/O module may further shift the data signals from the intermediate voltage domain to both a low voltage domain and a high voltage domain. Using the data signals from both of these domains, the I/O module outputs the data signals in a voltage domain corresponding to a communication technique used to transmit data to the external device.

Abstract: Embodiments disclosed herein include an I/O module with multiple level shifters that establish a plurality of voltage domains. Using the level shifters, the I/O module converts data signals in a core logic voltage domain to data signals in an external voltage domain. In one embodiment, when transmitting data signals to an external device, the I/O module level shifts the data signals from a core logic voltage domain to a low voltage domain. The I/O module then level shifts the data signals from the low voltage domain to an intermediate voltage domain. The I/O module may further shift the data signals from the intermediate voltage domain to both a low voltage domain and a high voltage domain. Using the data signals from both of these domains, the I/O module outputs the data signals in a voltage domain corresponding to a communication technique used to transmit data to the external device.

Abstract: A method and circuit for implementing protection for complementary metal oxide semiconductor (CMOS) output drivers, and a design structure on which the subject circuit resides are provided. An output driver stage transistor stack includes a plurality of series connected PFETs series connected with a plurality of series connected NFETs connected between upper and lower voltage supply rails. A pair of offset DC voltage levels provides respective gate voltages of an intermediate PFET and an intermediate NFET in the output driver stage transistor stack. A pair of pre-driver circuits receiving voltage level translated logic signals drive respective gate inputs of the upper PFET and the lower NFET in the output driver stage transistor stack. A voltage feedback circuit provides respective gate voltages of the PFET and NFET connected together in the output driver stage transistor stack.

Abstract: A method and circuit for implementing calibration of a linearly weighted, thermal coded I/O driver output stage, and a design structure on which the subject circuit resides are provided. The circuit includes a PFET calibration impedance matching function determining calibration PVTP bits for calibrating output stage PFETs of the linearly weighted, thermal coded I/O driver output stage, an NFET calibration impedance matching function determining calibration bits PVTN for calibrating output stage NFETs of the linearly weighted, thermal coded I/O driver output stage once the PFET calibration is complete and an output latch function providing the calibration PVTP and PVTN outputs for the I/O driver output stage to match an impedance of an external calibration resistor. A clock logic function generates an output latch clock and an internal reset signal completing calibration.

Abstract: A method and circuit for implementing low duty cycle distortion and low power differential to single ended level shifter, and a design structure on which the subject circuit resides are provided. The circuit includes an input differential amplifier providing positive and negative differential amplifier output signals coupled to an output amplifier providing a single ended output signal. The output amplifier amplifies and inverts the negative differential amplifier output signal. The output amplifier amplifies and superimposes the positive differential amplifier output signal with the amplified and inverted negative differential amplifier output signal, providing the single ended output signal with low duty cycle distortion.

Abstract: A method and circuit for implementing calibration of a linearly weighted, thermal coded I/O driver output stage, and a design structure on which the subject circuit resides are provided. The circuit includes a PFET calibration impedance matching function determining calibration PVTP bits for calibrating output stage PFETs of the linearly weighted, thermal coded I/O driver output stage, an NFET calibration impedance matching function determining calibration bits PVTN for calibrating output stage NFETs of the linearly weighted, thermal coded I/O driver output stage once the PFET calibration is complete and an output latch function providing the calibration PVTP and PVTN outputs for the I/O driver output stage to match an impedance of an external calibration resistor. A clock logic function generates an output latch clock and an internal reset signal completing calibration.

Abstract: A method and circuit for implementing low duty cycle distortion and low power differential to single ended level shifter, and a design structure on which the subject circuit resides are provided. The circuit includes an input differential amplifier providing positive and negative differential amplifier output signals coupled to an output amplifier providing a single ended output signal. The output amplifier amplifies and inverts the negative differential amplifier output signal. The output amplifier amplifies and superimposes the positive differential amplifier output signal with the amplified and inverted negative differential amplifier output signal, providing the single ended output signal with low duty cycle distortion.

Abstract: A method and circuit for implementing protection for complementary metal oxide semiconductor (CMOS) output drivers, and a design structure on which the subject circuit resides are provided. An output driver stage transistor stack includes a plurality of series connected PFETs series connected with a plurality of series connected NFETs connected between upper and lower voltage supply rails. A pair of offset DC voltage levels provides respective gate voltages of an intermediate PFET and an intermediate NFET in the output driver stage transistor stack. A pair of pre-driver circuits receiving voltage level translated logic signals drive respective gate inputs of the upper PFET and the lower NFET in the output driver stage transistor stack. A voltage feedback circuit provides respective gate voltages of the PFET and NFET connected together in the output driver stage transistor stack.

Abstract: A voltage level translating circuit that allows low voltage signals to be translated to higher voltages, a design structure utilized in the design, manufacture, and/or testing of the voltage level translating circuit, and a method of manufacturing the voltage level translating circuit are described. The translating circuit utilizes two different voltage domains. The high voltage rail of the low voltage domain acts as the ground of the high voltage domain. The translating circuit also utilizes a voltage buffer electrically connected to the high voltage domain and to the low voltage domain to prevent the circuit devices in either domain from seeing too high of a voltage. The translating circuit allows the circuits after the translating circuit to work with signals utilizing the high voltage rail of the high voltage domain.

Abstract: A memory interface device, system, method, and design structure for controlling for variable impedance and voltage in a memory system are provided. The memory interface device includes a calibration cell configurable to adjust an output impedance relative to an external reference resistor, and driver circuitry including multiple positive drive circuits and multiple negative drive circuits coupled to a driver output in a memory system. The memory interface device further includes impedance control logic to adjust the output impedance of the calibration cell and selectively enable the positive and negative drive circuits as a function of a drive voltage and a target impedance.

Abstract: A memory interface device, system, method, and design structure for controlling for variable impedance and voltage in a memory system are provided. The memory interface device includes a calibration cell configurable to adjust an output impedance relative to an external reference resistor, and driver circuitry including multiple positive drive circuits and multiple negative drive circuits coupled to a driver output in a memory system. The memory interface device further includes impedance control logic to adjust the output impedance of the calibration cell and selectively enable the positive and negative drive circuits as a function of a drive voltage and a target impedance.

Abstract: A design structure embodied in a machine readable medium used in a design process includes high-speed interface between a first network component and a second network component, the interface including a positive voltage input (VINP) and a negative voltage input (VINN) for receiving an input data signal from the first network component; the positive voltage input (VINP) coupled to a negative output circuit (OUTN) and the negative voltage input (VINN) by a positive input bus and a negative input bus, the negative voltage input (VINN) also coupled to a positive output circuit (OUTP). Implementing the high-speed interface calls for applying a bias to the a positive input bus and a negative input bus to periodically multiplex a data signal, thus providing a common receiving path for functional data and wrap data of the data signal.

Abstract: A high-speed interface between a first network component and a second network component includes a positive voltage input (VINP) and a negative voltage input (VINN) for receiving an input data signal from the first network component; the positive voltage input (VINP) coupled to a negative output circuit (OUTN) and the negative voltage input (VINN) by a positive input bus and a negative input bus, the negative voltage input (VINN) also coupled to a positive output circuit (OUTP). Implementing the high-speed interface calls for applying a bias to the a positive input bus and a negative input bus to periodically multiplex a data signal, thus providing a common receiving path for functional data and wrap data of the data signal.

Abstract: A voltage level shifting device for translating a lower operating voltage to a higher operating voltage includes a first input node coupled to a first pull down device and a second input node coupled to a second pull down device. The second node receives a complementary logic signal with respect to the first input node, the first and second input nodes associated with the lower operating voltage. A first pull up device is in series with the first pull down device and second pull up device is in series with the second pull down device, with the first and second pull up devices coupled to a power supply at the higher operating voltage. An output node is between the second pull down device and the second pull up device, the output node controlling the conductivity of the first pull up device. A clamping device is in parallel with the first pull up device, and configured to prevent the second pull up device from becoming fully saturated.

Abstract: An output driver impedance calibration circuit which is used to make I/O (input/output) off chip driver characteristics, for a plurality of output driver circuits, alike on the same chip. The output impedance of an input/output driver circuit is calibrated by providing an external target impedance reference (it could be a multiple of the actual target output impedance), multiple devices in the output stage of the I/O driver circuit, a circuit to determine the value of the actual output impedance as compared with its target output impedance and a determination of when to stop the calibration process.

Abstract: An output driver impedance calibration circuit which is used to make I/O (input /output) off chip driver characteristics, for a plurality of output driver circuits, alike on the same chip within a tighter tolerance than is otherwise obtainable in the prior art. The output impedance of an input/output driver circuit is calibrated by providing an external target impedance reference (it could be a multiple of the actual target output impedance), multiple devices in the output stage of the I/O driver circuit, a circuit to determine the value of the actual output impedance as compared with its target output impedance and a determination of when to stop the calibration process. With these four elements in a calibration process, the I/O impedance can typically be controlled to a +/−6.6% tolerance or better, and significantly benefits the signal integrity of the overall I/O interface.

Abstract: A low power CMOS bidirectional I/O buffer that translates low voltage core logic level signals into the higher voltage logic level signals. A first predrive stage is provided, comprising buffers (e.g., CMOS inverters) for tuning and balancing the circuit and the core signal combining circuit of a second predrive stage, thereby enabling IC designers to reduce the size of transistors in the level-shifting stage and providing more flexibility in the tuning of the predrive circuitry to synchronize or balance the logical transitions of the complementary transistors of the output driving stage. The invention provides a faster balanced level-shifting output buffer which enables higher frequency operation.