Abstract: Optical fibers with previously unattainable characteristics and the method of producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to produce ZBLAN, Indium Fluoride, Germanate and Chalcogenide optical fibers and other similar optical fibers in a microgravity environment. The resulting optical fibers have unique molecular structures not attainable when optical fibers with the identical chemical composition are produced in a standard 1 gravity environment. The method of the invention requires a novel draw tower and modified preform, which are specifically designed to operate in microgravity environments. A lead wire is inserted into the preform that, when wound onto a spool in the draw tower, causes a fiber to form. The pull rate of the lead wire controls the diameter of the fiber.

Abstract: Optical fibers with previously unattainable characteristics and the method of producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to produce ZBLAN, Indium Fluoride, Germanate and Chalcogenide optical fibers and other similar optical fibers in a microgravity environment. The resulting optical fibers have unique molecular structures not attainable when optical fibers with the identical chemical composition are produced in a standard 1 gravity environment. The method of the invention requires a novel draw tower and modified preform, which are specifically designed to operate in microgravity environments. A lead wire is inserted into the preform that, when wound onto a spool in the draw tower, causes a fiber to form. The pull rate of the lead wire controls the diameter of the fiber.

Abstract: Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.

Abstract: Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.

Abstract: A method of annealing semiconductor devices to form substantially ohmic contact regions between a layer of wide band-gap semiconductor material and contact areas disposed thereon includes exposing the semiconductor devices to an annealing temperature less than approximately 900 degrees Celsius for an annealing duration of greater than approximately two hours.

Abstract: A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Abstract: A receiving system dynamically searches a communications band for transmissions of messages having the same nominal communications parameters, including the use of the same spreading code, but having potentially different specific frequencies and code-phases. The receiver samples the communications band at each code-phase of the spreading code over a span of down-converted transmission frequencies. When a message element is detected at a particular code-phase and frequency, it is forwarded to a demodulator that demodulates the message and sends it to its intended destination. This technique allows each transmitter to be independent of the receiver. In a preferred embodiment of this invention, a Fast M-Sequence Transform (a Walsh-Hadamard Transform) is used to determine the power level at multiple code-phases at a given frequency in parallel, thereby substantially reducing the time required to search for transmissions at each discrete code-phase.

Abstract: A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Abstract: A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap material may comprise silicon carbide and a low melting point contact material may comprise aluminum. In another embodiment a substantially uniform ohmic contact may be formed between a contact material and a semiconductor material by annealing the contact at a temperature less than the melting point of the contact material. In an embodiment, the contact may be annealed for more than five hours.

Abstract: A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Abstract: A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap material may comprise silicon carbide and a low melting point contact material may comprise aluminum. In another embodiment a substantially uniform ohmic contact may be formed between a contact material and a semiconductor material by annealing the contact at a temperature less than the melting point of the contact material. In an embodiment, the contact may be annealed for more than five hours.