Patents by Inventor William F. Witcraft
William F. Witcraft has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7637024Abstract: A magnetic field sensing device can be realized by using a magnetic sensor in electronic compassing as well as switching. A magnet can be brought in close proximity to the magnetic sensor within an electronic compass to generate a signal that a portable information device has been closed. This signal can be input to a processor or other circuitry to initiate a response to the portable information device being closed. When the magnet is moved out of close proximity to the magnetic sensor, the magnetic sensor can be used in the electronic compass. Thus, a magnetic sensor can serve two functions, namely compassing and switching, reducing the need for separate sensors to perform both functions.Type: GrantFiled: October 26, 2005Date of Patent: December 29, 2009Assignee: Honeywell International Inc.Inventors: Mark D. Amundson, Hong Wan, William F. Witcraft
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Patent number: 7449882Abstract: A magnetic-sensing apparatus and methods of making and using thereof are disclosed. The sensing apparatus may have one or more magneto-resistive-sensing elements, one or more reorientation elements for adjusting the magneto-resistive-sensing elements, and semiconductor circuitry having driver circuitry for controlling the reorientation elements. The magneto-resistive-sensing elements, reorientation elements and/or semiconductor circuitry may be disposed in single package and/or monolithically formed on a single chip. Alternatively, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive-sensing elements, while a second portion of the semiconductor circuitry may be formed on a second chip. The first and second chips may be placed in close proximity and electrically connected together. Alternatively the chips may have no intentional electrical interaction.Type: GrantFiled: July 24, 2007Date of Patent: November 11, 2008Assignee: Honeywell International Inc.Inventors: William F. Witcraft, Mark D. Amundson
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Patent number: 7423329Abstract: A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor. In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip. As such, the first and second chips may be placed in close proximity and electrically connected together or alternatively have no intentional electrical interaction.Type: GrantFiled: April 30, 2007Date of Patent: September 9, 2008Assignee: Honeywell International Inc.Inventors: William F. Witcraft, Lonny L. Berg, Mark D. Amundson
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Patent number: 7420365Abstract: At least one magnetic field sensing device and an RF transceiver are integrated in a discrete, single-chip package. Rather than requiring at least two separate chips to wirelessly transmit the device output, an integrated, single chip solution can be used. The single chip integration of the at least one magnetic field sensing device and the RF transceiver can reduce the physical space required and, therefore, allow such devices to be smaller, lighter, and possibly more portable.Type: GrantFiled: March 15, 2006Date of Patent: September 2, 2008Assignee: Honeywell International Inc.Inventors: William F. Witcraft, Jeffrey J. Kriz
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Patent number: 7358722Abstract: An integrated three-dimensional magnetic or any field sensing device and a method to fabricate an integrated three-dimensional magnetic sensing device is presented. An integrated three-dimensional magnetic sensing device comprises an apparatus that defines at least a first surface area and at least one sloped surface which is sloped with respect to the first surface area. Two magnetic sensing units could be arranged on the first surface area to provide first and second orthogonal sensing directions, and a third magnetic sensing unit could be arranged on the at least one sloped surface to provide sensing in at least a third sensing direction which is orthogonal to the first and second orthogonal sensing directions. Bias could be applied to the third magnetic sensing unit to cancel a component of the magnetic field sensed by the third magnetic sensing unit so that the third magnetic sensor unit only provides sensing in the third direction.Type: GrantFiled: October 2, 2006Date of Patent: April 15, 2008Assignee: Honeywell International Inc.Inventors: Andrzej Peczalski, James F Detry, Hong Wan, William F Witcraft
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Patent number: 7277793Abstract: At least one magnetic field sensing device and GPS receiver integrated in a discrete, single-chip package, and a method of manufacture for the same. Rather than requiring at least two separate chips to be used to realize GPS positioning and compassing capabilities in a single device, an integrated, single chip solution can be used. A single chip integration of a GPS receiver and at least one magnetic field sensing device can reduce the physical space required to provide positioning and electronic compassing capabilities in a single device, and therefore allow such devices to be smaller, lighter, and possibly more portable.Type: GrantFiled: March 13, 2007Date of Patent: October 2, 2007Assignee: Honeywell International Inc.Inventors: William F. Witcraft, Hong Wan, Chesian J. Yue, Tamara K. Bratland
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Patent number: 7265543Abstract: A magnetic-sensing apparatus and methods of making and using thereof are disclosed. The sensing apparatus may have one or more magneto-resistive-sensing elements, one ore more reorientation elements for adjusting the magneto-resistive-sensing elements, and semiconductor circuitry having driver circuitry for controlling the reorientation elements. The magneto-resistive-sensing elements, reorientation elements and semiconductor circuitry may be disposed in single package and/or monolithically formed on a single chip. Alternatively, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive-sensing elements, while a second portion of the semiconductor circuitry may be formed on a second chip. The first and second chips may be placed in close proximity and electrically connected together. Alternatively the chips may have no intentional electrical interaction.Type: GrantFiled: January 8, 2004Date of Patent: September 4, 2007Assignee: Honeywell International Inc.Inventors: William F. Witcraft, Mark D. Amundson
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Patent number: 7239000Abstract: A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor. In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip.Type: GrantFiled: January 8, 2004Date of Patent: July 3, 2007Assignee: Honeywell International Inc.Inventors: William F. Witcraft, Lonny L. Berg, Mark D. Amundson
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Patent number: 7238541Abstract: A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a magnetic layer above a semiconductor device and forming metallized contacts for connecting interlayers of the semiconductor device. With the method of the present invention, the deposition of the magnetic material is integrated with the semiconductor manufacturing process.Type: GrantFiled: July 18, 2005Date of Patent: July 3, 2007Assignee: Honeywell International Inc.Inventors: Dale F. Berndt, Andrzej Peczalski, Eric E. Vogt, William F. Witcraft
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Patent number: 7206693Abstract: At least one magnetic field sensing device and GPS receiver integrated in a discrete, single-chip package, and a method of manufacture for the same. Rather than requiring at least two separate chips to be used to realize GPS positioning and compassing capabilities in a single device, an integrated, single chip solution can be used. A single chip integration of a GPS receiver and at least one magnetic field sensing device can reduce the physical space required to provide positioning and electronic compassing capabilities in a single device, and therefore allow such devices to be smaller, lighter, and possibly more portable.Type: GrantFiled: January 8, 2004Date of Patent: April 17, 2007Assignee: Honeywell International Inc.Inventors: William F. Witcraft, Hong Wan, Cheisan J. Yue, Tamara K. Bratland
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Patent number: 7145798Abstract: An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.Type: GrantFiled: May 19, 2005Date of Patent: December 5, 2006Assignee: Micron Technology, Inc.Inventors: William F. Witcraft, Lonny Berg, Alan Hurst, William Vavra, Mark Jenson
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Patent number: 7126330Abstract: An integrated three-dimensional magnetic or any field sensing device and a method to fabricate an integrated three-dimensional magnetic sensing device is presented. An integrated three-dimensional magnetic sensing device comprises an apparatus that defines at least a first surface area and at least one sloped surface which is sloped with respect to the first surface area. Two magnetic sensing units could be arranged on the first surface area to provide first and second orthogonal sensing directions, and a third magnetic sensing unit could be arranged on the at least one sloped surface to provide sensing in at least a third sensing direction which is orthogonal to the first and second orthogonal sensing directions. Bias could be applied to the third magnetic sensing unit to cancel a component of the magnetic field sensed by the third magnetic sensing unit so that the third magnetic sensor unit only provides sensing in the third direction.Type: GrantFiled: June 3, 2004Date of Patent: October 24, 2006Assignee: Honeywell International, Inc.Inventors: Andrzej Peczalski, James F Detry, Hong Wan, William F Witcraft
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Patent number: 7037604Abstract: A magnetic sensing device is disclosed. The magnetic sensing device may have an integrated circuit and a magnetic sensor. A magnetic buffer layer of material may be deposited between the integrated circuit and the magnetic sensor to shield the magnetic sensor from stray electromagnetic fields generated by the integrated circuit. The magnetic buffer layer may also absorb electromagnetic fields generated by other internal sources of the magnetic sensing device.Type: GrantFiled: July 23, 2002Date of Patent: May 2, 2006Assignee: Honeywell International, Inc.Inventor: William F. Witcraft
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Patent number: 6914805Abstract: An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.Type: GrantFiled: August 21, 2002Date of Patent: July 5, 2005Assignee: Micron Technology, Inc.Inventors: William F. Witcraft, Lonny Berg, Alan Hurst, William Vavra, Mark Jenson
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Patent number: 6903429Abstract: A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third terminal, each of which is located between two adjacent gated regions other than the two innermost gated regions, output positive and negative Hall voltages. By appropriately controlling a bias voltage to the gated regions, small changes in a magnetic field induces larger currents in channel regions under the gated regions, which, in turn, results in detectable Hall voltages.Type: GrantFiled: April 15, 2003Date of Patent: June 7, 2005Assignee: Honeywell International, Inc.Inventors: Dale F. Berndt, Andrzej Peczalski, Eric E. Vogt, William F. Witcraft
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Patent number: 6850057Abstract: A method of making a magnetorestrictive sensor involves the deposition of a magnetorestrictive strip over a substrate, the deposition of an insulating layer over the magnetorestrictive strip, the etching of barber pole windows through the insulating layer, the deposition of a conductive material over the insulating layer and into the barber windows, and the etching away of the conductive material between the barber pole windows so as to form barber poles. In this manner, the formation of the barber poles is controlled by the windows formed in the insulating layer.Type: GrantFiled: July 19, 2001Date of Patent: February 1, 2005Assignee: Honeywell International, Inc.Inventors: William F. Witcraft, Lonny Berg, Mae W. Ng, Tom Yeh
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Publication number: 20040257861Abstract: A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a magnetic layer above a semiconductor device and forming metallized contacts for connecting interlayers of the semiconductor device. With the method of the present invention, the deposition of the magnetic material is integrated with the semiconductor manufacturing process.Type: ApplicationFiled: June 17, 2003Publication date: December 23, 2004Inventors: Dale F. Berndt, Andrzej Peczalski, Eric E. Vogt, William F. Witcraft
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Publication number: 20040254726Abstract: At least one magnetic field sensing device and GPS receiver integrated in a discrete, single-chip package, and a method of manufacture for the same. Rather than requiring at least two separate chips to be used to realize GPS positioning and compassing capabilities in a single device, an integrated, single chip solution can be used. A single chip integration of a GPS receiver and at least one magnetic field sensing device can reduce the physical space required to provide positioning and electronic compassing capabilities in a single device, and therefore allow such devices to be smaller, lighter, and possibly more portable.Type: ApplicationFiled: January 8, 2004Publication date: December 16, 2004Applicant: Honeywell International Inc.Inventors: William F. Witcraft, Hong Wan, Cheisan J. Yue, Tamara K. Bratland
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Publication number: 20040207400Abstract: A magnetic-sensing apparatus and methods of making and using thereof are disclosed. The sensing apparatus may have one or more magneto-resistive-sensing elements, one ore more reorientation elements for adjusting the magneto-resistive-sensing elements, and semiconductor circuitry having driver circuitry for controlling the reorientation elements. The magneto-resistive-sensing elements, reorientation elements and semiconductor circuitry may be disposed in single package and/or monolithically formed on a single chip. Alternatively, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive-sensing elements, while a second portion of the semiconductor circuitry may be formed on a second chip. The first and second chips may be placed in close proximity and electrically connected together. Alternatively the chips may have no intentional electrical interaction.Type: ApplicationFiled: January 8, 2004Publication date: October 21, 2004Applicant: Honeywell International Inc.Inventors: William F. Witcraft, Mark D. Amundson
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Publication number: 20040207031Abstract: A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third terminal, each of which is located between two adjacent gated regions other than the two innermost gated regions, output positive and negative Hall voltages. By appropriately controlling a bias voltage to the gated regions, small changes in a magnetic field induces larger currents in channel regions under the gated regions, which, in turn, results in detectable Hall voltages.Type: ApplicationFiled: April 15, 2003Publication date: October 21, 2004Inventors: Dale F. Berndt, Andrzej Peczalski, Eric E. Vogt, William F. Witcraft