Patents by Inventor William Fan

William Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240162319
    Abstract: Embodiments of the invention include a stacked device having a first epitaxial region and a second epitaxial region vertically displaced from the first epitaxial region. The first epitaxial region comprising an asymmetric profile with a horizontal protrusion.
    Type: Application
    Filed: November 14, 2022
    Publication date: May 16, 2024
    Inventors: Su Chen Fan, Albert M. Young, Ruilong Xie, Prabudhya Roy Chowdhury, Jay William Strane
  • Patent number: 11930411
    Abstract: Disclosed herein a system, a method and a device for selecting between a primary link and a secondary link for AR/VR applications. A console can provide a VR/AR session to a user through a head wearable display. The console can determine that a first measurement of a primary link between the console and a head wearable display is less than a first threshold. The first measurement can include a quality metric of the primary link. The console can activate a secondary link between the console and the head wearable display. The console can determine whether a second measurement of the primary link between the console and the head wearable display is less than a second threshold. The console can transition when the second measurement is less than the second threshold, traffic on the primary link to the activated secondary link.
    Type: Grant
    Filed: September 19, 2022
    Date of Patent: March 12, 2024
    Assignee: Meta Platforms Technologies, LLC
    Inventors: Dong Zheng, Qi Qu, Gang Lu, Yuting Fan, William Louis Abbott
  • Publication number: 20240079461
    Abstract: A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Inventors: Brent A. Anderson, Su Chen Fan, Jay William Strane, Ruilong Xie
  • Publication number: 20240071811
    Abstract: A stacked field effect transistor (FET) device. The device includes an opening in a shallow trench isolation (STI) region on a substrate. The device also includes an epitaxy region located on the substrate at a bottom portion of STI region in the opening. The device further includes a substrate contact that directly contacts the epitaxy region.
    Type: Application
    Filed: August 25, 2022
    Publication date: February 29, 2024
    Inventors: Su Chen Fan, Jay William Strane, Gen Tsutsui, Stuart Sieg
  • Patent number: 9894670
    Abstract: A resource management system for a network device is described. A resource management system includes a resource manager configured to generate a sequence of a plurality of access time slots for a plurality of candidate entities and to redistribute access to one or more of the plurality of access time slots in the sequence based on availability and eligibility. The resource management system also includes a resource monitor configured to detect usage of each of the access time slots by each of the plurality of candidate entities.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: February 13, 2018
    Assignee: Innovium, Inc.
    Inventors: William Brad Matthews, Puneet Agarwal, Bruce H. Kwan, Ashwin Alapati, William Fan, Ajit K. Jain