Abstract: A high electron mobility transistor (HEMT) device with a highly resistive layer co-doped with carbon (C) and a donor-type impurity and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a substrate, the highly resistive layer co-doped with C and the donor-type impurity formed above the substrate, a channel layer formed above the highly resistive layer, and a barrier layer formed above the channel layer. In one embodiment, the highly resistive layer comprises gallium nitride (GaN). In one embodiment, the donor-type impurity is silicon (Si). In another embodiment, the donor-type impurity is oxygen (O).

Abstract: A high electron mobility transistor (HEMT) device with a highly resistive layer co-doped with carbon (C) and a donor-type impurity and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a substrate, the highly resistive layer co-doped with C and the donor-type impurity formed above the substrate, a channel layer formed above the highly resistive layer, and a barrier layer formed above the channel layer. In one embodiment, the highly resistive layer comprises gallium nitride (GaN). In one embodiment, the donor-type impurity is silicon (Si). In another embodiment, the donor-type impurity is oxygen (O).

Abstract: A modular electric induction heating and coating apparatus and method for coating, heating and/or coating and heating (and vice versa) the exterior surface of a pipe section within a pipe treatment region is provided. The apparatus comprises an interchangeable central main frame assembly removably attached to an outer drive frame assembly on each side of the central main frame assembly. An interchangeable induction coil assembly can be mounted in a coil main frame assembly of the central main frame assembly. The coil main frame assembly can close around a pipe section for electric induction heating of the pipe section within the pipe treatment region via a driver system in a central top drive frame assembly. The outer drive frame assemblies include mounting and rotational drive assemblies for interchangeable coating head cartridges that can coat the section of the pipe in the pipe treatment region.

Abstract: A high electron mobility transistor device includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a contact and barrier layer on the channel layer, the contact and barrier layer being made of indium aluminum nitride with a plurality of indium precipitates exposed on the surface of the contact and barrier layer. The plurality of indium precipitates exposed on the surface of the contact and barrier layer enable metal contacts to be formed directly on the contact and barrier layer with reliable and repeatable electrical performance. The contact and barrier layer may be epitaxially grown in a metal organic chemical vapor deposition process where a ratio of group-V precursors to group-III precursors is low and a flow rate of an indium precursor is greater than a flow rate of an aluminum precursor.

Abstract: A modular electric induction heating and coating apparatus and method for coating, heating and/or coating and heating (and vice versa) the exterior surface of a pipe section within a pipe treatment region is provided. The apparatus comprises an interchangeable central main frame assembly removably attached to an outer drive frame assembly on each side of the central main frame assembly. An interchangeable induction coil assembly can be mounted in a coil main frame assembly of the central main frame assembly. The coil main frame assembly can close around a pipe section for electric induction heating of the pipe section within the pipe treatment region via a driver system in a central top drive frame assembly. The outer drive frame assemblies include mounting and rotational drive assemblies for interchangeable coating head cartridges that can coat the section of the pipe in the pipe treatment region.

Abstract: A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an n-type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500 nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n-layer. In one example, the LRL is an AlGaN/GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure.

Abstract: A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an n-type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500 nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n-layer. In one example, the LRL is an AlGaN/GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure.