Patents by Inventor William Frederick Heagerty

William Frederick Heagerty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Edgeless transistor
    Patent number: 4054894
    Abstract: An MOS mesa transistor is comprised of a silicon island on an insulating substrate. The silicon island consists entirely of a source region, a drain region, and an I-shaped channel region which separates the source and drain regions. The island has a coating of an oxide of silicon thereon. A rectangular conductive gate is adjacent to the coating and above the channel region and the transverse extremities of the I-shaped channel region extend bilaterally and transversely from underneath the gate at each end thereof.
    Type: Grant
    Filed: May 27, 1975
    Date of Patent: October 18, 1977
    Assignee: RCA Corporation
    Inventors: William Frederick Heagerty, Luke Dillon, Jr.