Abstract: In one example, an integrated circuit includes memory control logic (e.g., CMOS logic circuit) on the front side of the integrated circuit die and passive variable resistance memory on the back side of the integrated circuit die. The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory on the back side of the integrated circuit die is electrically connected to the memory control logic on the front side of the integrated circuit die through at least one through-die vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic on the front side of the integrated circuit die operatively coupled to the memory control logic.

Abstract: In one example, an integrated circuit includes memory control logic (e.g., CMOS logic circuit) and passive variable resistance memory disposed above the memory control logic. The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory is electrically connected to the memory control logic through at least one vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic operatively coupled to the memory control logic.

Abstract: In one example, an integrated circuit includes two integrated circuit dies that are face-to-face mounted together. The first integrated circuit die includes passive variable resistance memory and the second integrated circuit die includes memory control logic (e.g., CMOS logic circuit). The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory on the first integrated circuit die is electrically connected to the memory control logic on the second integrated circuit die through at least one vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic on the second integrated circuit die operatively coupled to the memory control logic.

Abstract: A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.

Abstract: A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.

Abstract: A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane.

Abstract: A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.

Abstract: Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS technologies, are presented. These methods and systems provide the capability to measure the thickness of an SEG film in-situ utilizing optical ellipsometry equipment during or after SEG layer growth, prior to removing the wafer from the SEG growth tool. Optical ellipsometry equipment can be integrated into the SEG platform and control software, thus providing automated process control (APC) capability for SEG thickness. The integration of the ellipsometry equipment may be varied, dependent upon the needs of the fabrication facility, e.g., integration to provide ellipsometer monitoring of a single process tool, or multiple tool monitoring, among other configurations.

Abstract: A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane.

Abstract: A semiconductor-on-insulator (SOI) device. The SOI device includes an SOI wafer including an active layer, a substrate and a buried insulation layer disposed therebetween. The buried insulation layer includes an oxide trap region disposed along an upper surface of the buried insulation layer, the oxide trap region having a plurality of oxide traps to promote carrier recombination.

Abstract: A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane.

Abstract: Accurate determination of gate dielectric thickness is required to produce high-reliability and high-performance ultra-thin gate dielectric semiconductor devices. Large area gate dielectric capacitors with ultra-thin gate dielectric layers suffer from high gate leakage, which prevents the accurate measurement of gate dielectric thickness. Accurate measurement of gate dielectric thickness of smaller area gate dielectric capacitors is hindered by the relatively large parasitic capacitance of the smaller area capacitors. The formation of first and second dummy structures on a wafer allow the accurate determination of gate dielectric thickness. First and second dummy structures are formed that are substantially similar to the gate dielectric capacitors except that the first dummy structures are formed without the second electrode of the capacitor and the second dummy structures are formed without the first electrode of the capacitor structure.

Abstract: In one embodiment, the present invention relates to a method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of: (A) pre-treating one or more exposed portions of a dielectric layer with a plasma in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and (B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching.

Abstract: Semiconductor devices exhibiting reduced gate resistance and reduced silicide spiking in source/drain regions are fabricated by forming thin metal silicide layers on the gate electrode and source/drain regions and then selectively resilicidizing the gate electrodes. Embodiments include forming the thin metal silicide layers on the polysilicon gate electrodes and source/drain regions, depositing a dielectric gap filling layer, as by high density plasma deposition, etching back to selectively expose the silicidized polysilicon gate electrodes and resilicidizing the polysilicon gate electrodes to increase the thickness of the metal silicide layers thereon. Embodiments further include resilicidizing the polysilicon gate electrodes including a portion of the upper side surfaces forming mushroom shaped metal silicide layers.

Abstract: Accurate determination of gate dielectric thickness is required to produce high-reliability and high-performance ultra-thin gate dielectric semiconductor devices. Large area gate dielectric capacitors with ultra-thin gate dielectric layers suffer from high gate leakage, which prevents the accurate measurement of gate dielectric thickness. Accurate measurement of gate dielectric thickness of smaller area gate dielectric capacitors is hindered by the relatively large parasitic capacitance of the smaller area capacitors. The formation of first and second dummy structures on a wafer allow the accurate determination of gate dielectric thickness. First and second dummy structures are formed that are substantially similar to the gate dielectric capacitors except that the first dummy structures are formed without the second electrode of the capacitor and the second dummy structures are formed without the first electrode of the capacitor structure.

Abstract: An SOI semiconductor and method for making the same includes a substrate and dielectric support structures that support a silicon body above the substrate. This creates a void underneath the silicon body and thereby reduces the capacitance between the source/drain regions on body and the substrate.

Abstract: A method of forming a semiconductor device provides a gate electrode on a substrate and forms a polysilicon reoxidation layer over the substrate and the gate electrode. A nitride layer is deposited over the polysilicon reoxidation layer and anisotropically etched The etching stops on the polysilicon reoxidation layer, with nitride offset spacers being formed on the gate electrode. The use of the polysilicon reoxidation layer as an etch stop layer prevents the gouging of the silicon substrate underneath the nitride layer, while allowing the offset spacers to be formed.

Abstract: A semiconductor-on-insulator (SOI) wafer. The wafer includes a silicon substrate, a buried oxide (BOX) layer disposed on the substrate, and an active layer disposed on the box layer. The active layer has an upper silicon layer disposed on a silicon-germanium layer. The silicon-germanium layer is disposed on a lower silicon layer. The silicon-germanium of the silicon-germanium layer is strained silicon-germanium and is about 200 Å to about 400 Å thick.

Abstract: A method of manufacturing a semiconductor device includes providing a silicon semiconductor layer over an insulating layer, and partially removing a first portion of the silicon layer. The silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the silicon layer initially can have the same thickness. A semiconductor device is also disclosed.

Abstract: The present invention relates to a process of fabricating a semiconductor device, including steps of providing a semiconductor wafer; depositing on the semiconductor wafer at least one layer comprising a high-K dielectric material layer; and subsequently removing a selected portion of the at least one layer comprising a high-K dielectric material by implanting ions into the selected portion, and removing the selected portion by etching. As a result of the implantation, the etch rate of the selected portion is increased relative to an etch rate without the implanting.