Patents by Inventor William G. Houston

William G. Houston has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making gate overlapped lightly doped drain for buried channel devices
    Patent number: 5358879
    Abstract: A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.
    Type: Grant
    Filed: April 30, 1993
    Date of Patent: October 25, 1994
    Assignee: Loral Federal Systems Company
    Inventors: Frederick T. Brady, Charles P. Breiten, Nadium F. Haddad, William G. Houston, Oliver S. Spencer, Steven J. Wright