Abstract: An interconnect module for an integrated circuit chip incorporates a thin, high dielectric constant embedded capacitor structure to provide reduced power distribution impedance, and thereby promote higher frequency operation. The interconnect module is capable of reliably attaching an integrated circuit chip to a printed wiring board via solder ball connections, while providing reduced power distribution impedance of less than or equal to approximately 0.60 ohms at operating frequencies in excess of 1.0 gigahertz.

Abstract: An interconnect module for an integrated circuit chip incorporates a thin, high dielectric constant embedded capacitor structure to provide reduced power distribution impedance, and thereby promote higher frequency operation. The interconnect module is capable of reliably attaching an integrated circuit chip to a printed wiring board via solder ball connections, while providing reduced power distribution impedance of less than or equal to approximately 0.60 ohms at operating frequencies in excess of 1.0 gigahertz.

Abstract: An interconnect module for an integrated circuit chip incorporates a thin, high dielectric constant embedded capacitor structure to provide reduced power distribution impedance, and thereby promote higher frequency operation. The interconnect module is capable of reliably attaching an integrated circuit chip to a printed wiring board via solder ball connections, while providing reduced power distribution impedance of less than or equal to approximately 0.60 ohms at operating frequencies in excess of 1.0 gigahertz.

Abstract: The present invention generally relates to the field of integrated circuit chip packaging. More particularly, the present invention relates to methods of manufacturing integrated circuit chip packages, and methods for electrically connecting and bonding or attaching semiconductor devices to an integrated circuit chip.

Abstract: The present invention generally relates to the field of integrated circuit chip packaging. More particularly, the present invention relates to methods of manufacturing integrated circuit chip packages, and methods for electrically connecting and bonding or attaching semiconductor devices to an integrated circuit chip.

Abstract: The present invention generally relates to the field of integrated circuit chip packaging. More particularly, the present invention relates to methods of manufacturing integrated circuit chip packages, and methods for electrically connecting and bonding or attaching semiconductor devices to an integrated circuit chip.

Abstract: An integrated circuit package for housing an integrated circuit (IC) chip and providing electrical connectivity of data signals and voltage signals between the IC chip and an electronic component includes a substrate, an IC chip affixed to the substrate and at least three conductive layers on the substrate. The three conductive layers include at least a first voltage layer adjacent to the substrate for providing a first reference voltage signal (i.e., ground) to the IC chip, a second voltage layer for providing a second reference voltage signal (i.e., power) to the IC chip, and a signal layer. To maximize speed and minimize complexing, all of the data signals to the IC chip are routed on the signal layer. The power and ground layers are closely coupled and separated by a dielectric layer having a relatively high dielectric constant for providing significant decoupling capacitance. A low dielectric layer is provided for separating the power layer from the signal layer.

Abstract: A method and apparatus for manufacturing large area multilayer interconnects for electronic substrates and circuit boards uses high density area array interconnections that are created by solid state diffusion. Two or more pretested subsections are electrically and mechanically joined together to simultaneously form a multilayer substrate without employing a flow-type connection where the conductive interconnect material is entirely in a liquid phase at some point during the joining process. Each substrate is comprised of a planar dielectric substrate having a plurality of conductive layers. On at least one surface of the substrate a conductive pad lay is formed having a plurality of interconnect pads. The interconnect pads are positioned at a uniform height above the surface of the dielectric substrate and include a base metal layer, a top metal layer with at least one of the conductive pad layers have a donor metal disposed on top of the top metal layer.