Abstract: A method of curing a layer of RTV encapsulating material (24) disposed between a substrate (20) and a chip carrier (22), without the formation of voids in the material immediately adjacent opposed surfaces (32 and 34) of the substrate and the chip carrier, respectively, initially involves cleaning the substrate-chip carrier assembly (20-22) with an activating solvent (e.g., xylene), after which the assembly is blow-dried. The encapsulating material (24), having a viscosity on the order of 6-9 poise, then is flowed between the substrate (20) and the chip carrier (22) and a layer of the material also may be flowed over the top of the assembly. The assembly (20-22) next is immersed in a water bath (46), which includes on the order of 10 milliliters of water for each cubic centimeter of the material (24) to be cured, at room temperature under a hydrostatic head on the order of 3-4 inches for on the order of 16 hours or more, while the material cures.