Abstract: There is provided a transistor comprising: a graphene layer structure provided on a non-metallic surface of a substrate, the graphene layer structure having an insulating cap; a source contact provided in contact with a first edge of the graphene layer structure; an insulator provided in contact with an opposite, second edge of the graphene layer structure; a drain contact provided in contact with the insulator, whereby there is a distance of least separation between the drain contact and the graphene layer structure along the second edge of the graphene layer structure and through the insulator; and a gate contact provided (i) over the graphene layer structure and separated therefrom by the insulating cap and/or (ii) under the graphene layer structure and separated therefrom by substrate.

Abstract: A radiation detector comprising a transistor, e.g. a FET, formed of one or more organic semiconductor materials having a neutron sensitizer element dispersed therein. The sensitizer element is one or more elements selected from the group consisting of boron, cadmium, lithium and gadolinium. The semiconductor device comprises a diode, a transistor (e.g. a Field Effect Transistor) or a non-rectifying, symmetric, semiconductor device. The organic semiconductor materials comprise a donor organic semiconductor material and an acceptor organic semiconductor material or a combination of organic and inorganic donor- acceptor materials.

Abstract: An optoelectronic signal translating device having a region containing rare earth or transition metal ions for generation of radiation of a predetermined wavelength. Said region includes an organic complex comprising a ligand adapted to enhance the emission of radiation and a chromophore separately co-operable with a radiation source of wavelength not greater than that of said predetermined desired radiation. Said chromophore can be excited to cross-couple with the upper permitted energy state of said rare earth or transition metal ions, thereby generating said predetermined desired radiation by subsequent decay of said ions to the permitted lower energy state.

Abstract: An optoelectronic signal translating device having a region containing rare earth or transition metal ions for generation of radiation of a predetermined wavelength. Said region includes an organic complex comprising a ligand adapted to enhance the emission of radiation and a chromophore separately co-operable with a radiation source of wavelength not greater than that of said predetermined desired radiation. Said chromophore can be excited to cross-couple with the upper permitted energy state of said rare earth or transition metal ions, thereby generating said predetermined desired radiation by subsequent decay of said ions to the permitted lower energy state.