Abstract: A connector and associated method for interconnecting a plurality of adjacent paired wire terminations on a standard 110 style punch down wiring block for a telephone system. The connector includes two isolated conductors disposed along the length of the connector body and a plurality of pins connected to the respective conductors and extending away from the body. The pins are adapted for insertion into respective 110 style punch down block terminations when the connector is installed in a connected position on the wiring block, thereby connecting in parallel a plurality of telephones hard-wired to the adjacent paired wire terminations. The connector may be formed to have one or more break points disposed between respective pairs of the pins for easy breaking/cutting of the connector to a desired length for interconnecting a predetermined number of telephones.

Abstract: A method of manufacturing a semiconductor device employing a polishing pad conditioner that directs a fluid stream at a polishing pad to remove accumulated material from the pad. The fluid stream may contact a large area of the polishing pad or a smaller area where the fluid stream is moved to condition different areas of the polishing pad. The fluid stream may include abrasive particles to promote the removal of the accumulated materials. The velocity of the fluid stream may be increased or decreased to promote removal of the accumulated materials. In yet another embodiment, the present invention is directed to a process for manufacturing an integrated circuit using a CMP process where the pad has been conditioned using the fluid stream. The present invention is also directed to a chemical mechanical planarization system including a pad conditioner.

Abstract: A computer system for a motion impaired user includes a housing, a processor in the housing, and a display connected to the processor for displaying at least one menu of selectable commands arranged in a sequence. A mouse is connected to the processor for positioning a pointer on the display responsive to movement of the mouse. The computer further includes a mouse template having at least one elongate body having a plurality of stations therealong corresponding to the sequence of selectable commands and cooperates with the mouse for assisting the motion impaired user so that when the mouse is positioned at a station, the pointer on the display is positioned at the corresponding selectable command of the menu.

Abstract: A chemical mechanical polishing (CMP) device carrier head (54) utilizing a pressure pack (58) for transferring a polishing force (D) to a wafer (15) being polished. The pressure pack may include a silicon gel material (60) encapsulated within a sealed urethane casing (62). The pressure pack provides a desired fluid coupling in the polishing force load path, allowing the carrier head to function as a front side floating reference polishing apparatus. The pressure pack may include a plurality of casings (70, 72) defining a plurality of chambers (66, 68) in order to affect the distribution of pressure across an abutting pressure plate (56, 65).

Abstract: A connector and associated method for interconnecting a plurality of adjacent paired wire terminations on a standard 110 style punch down wiring block for a telephone system. The connector includes two isolated conductors disposed along the length of the connector body and a plurality of pins connected to the respective conductors and extending away from the body. The pins are adapted for insertion into respective 110 style punch down block terminations when the connector is installed in a connected position on the wiring block, thereby connecting in parallel a plurality of telephones hard-wired to the adjacent paired wire terminations. The connector may be formed to have one or more break points disposed between respective pairs of the pins for easy breaking/cutting of the connector to a desired length for interconnecting a predetermined number of telephones.

Abstract: The present invention is a method for removing a portion of a liner film and a metallization layer superimposed over the liner film to expose an underlying dielectric layer on a semiconductor wafer. Specifically, at least a portion of the metallization layer is removed by chemical mechanical polishing the metallization layer using a first polishing slurry having a plurality of first abrasive particles and at least a portion of the liner film is removed by chemical mechanical polishing the liner film using a second polishing slurry having a plurality of second abrasive particles. The first abrasive particles and the second abrasive particles used in the polishing steps have different bulk densities.

Abstract: A method and apparatus for controlling a pointer on a computer screen adapted for use by individuals with limited or no manual dexterity. A track ball is positioned to protrude from the upper surface of a generally partially cylindrically shaped base. A mating cradle sits on top of the base with its lower surface in contact with the upper surface of the track ball and the upper surface of the base. The upper surface of the cradle support is shaped to accept the forearm of an operator. The track ball is coupled in a known fashion to operate a pointer on a computer display. The operator can move the cursor up and down on the screen by pushing his or her arm outwardly or inwardly and can move the cursor left to right on the screen by rotating his or her arm in the cradle about its longitudinal axis.

Abstract: A non-destructive method for measuring the thickness loss of a polishing pad due to pad conditioning includes the use of rigid planar members placed on the surfaces of both the conditioned and non-conditioned sections of the polishing pad. Measurements are made using measurement instruments which overhang the depressed conditioned section and measure the height difference between the upper surfaces of the planar members. The measurement instruments may be repositioned and measurements repeated to obtain an average thickness loss.

Abstract: An apparatus for determining endpoint in the chemical mechanical polishing of a metal film using an acidic slurry includes a hydrogen sensor which senses the amount of hydrogen vapor being produced as a result of the reaction between the metal film and the acidic slurry. When the concentration of hydrogen vapor in the reaction area drops, endpoint is attained and the polishing operation may be terminated or otherwise adjusted. Hydrogen sensing elements include a palladium gate MOS transistor, expandable plastics and a tungsten oxide film.

Abstract: A method and apparatus for making a chemical mechanical polishing (CMP) article dissolves gas into solidifiable material, and reduces pressure on the solidifiable material to form gas bubbles therein while solidifying the solidifiable material to make a matrix with voids therein. The gas bubbles are preferably formed to define voids interconnected with adjacent voids to thereby define a porous matrix. The porous matrix ensures uniform distribution of the CMP slurry for greater polishing uniformity. The method produces a CMP pad, for example, with very uniform porosity throughout its thickness so that polishing remains uniform as the pad is consumed in use. The gas and the solidifiable material may preferably be non-reactive with one another. The gas may comprise at least one inert gas, such as nitrogen or argon, for example. The solidifiable material may be a polymer-forming liquid and at least one of a curing and cross-linking agent mixed therein.

Abstract: A method for preparing a chemical mechanical polishing apparatus for polishing product substrates includes polishing designated “warm-up” substrates until polishing pad characteristics have achieved steady state conditions. The reusable warm-up substrates may be formed of a mechanically resistant material or a material having substantially the same removal characteristic as the product film to be polished. The reusable warm-up substrates may also be formed of a mechanically resistant film formed over a semiconductor substrate. The polishing pad characteristic of pad compression may be determined using a previously established correlation or it may be measured.

Abstract: An apparatus for determining the endpoint in a chemical mechanical polishing operation used for polishing a metal-containing material includes an electrochemical cell and an electronic circuit. An acidic polishing slurry is used to oxidize the metal and the oxidized metal is included in an effluent slurry stream, a sample of which is provided to the apparatus. The apparatus includes a liquid-phase working electrode, a reference electrode and a solid electrolyte which allows for the interchange of ions between the electrodes. An electronic circuit is coupled to the electrode for monitoring the component activity of the effluent slurry stream by measuring the electric potential across the electrodes. When the measured electric potential changes, indicating a change in the composition of the effluent slurry, endpoint is indicated.

Abstract: A method and system for determining endpoint in a chemical mechanical polishing operation by measuring the amount of linear displacement of a member such as an assembly which secures the substrate being polished and urges the surface being polished towards the rotating polishing pad. The thickness of material being removed corresponds to the amount of linear displacement, and endpoint is achieved and therefore detected when a desired material thickness has been removed. The linear displacement can be measured using various techniques such as by using a dial gauge, laser or profilometer.

Abstract: An apparatus and method for conditioning a polishing pad used in a chemical mechanical polishing (CMP) process. The polishing pad is conditioned by the application of a conditioning device to the surface of the rotating polishing pad. The amount of force which is applied to the conditioning device is directly controlled by a force control mechanism so as to make the conditioning process more consistent.

Abstract: A method for determining the endpoint in a chemical mechanical polishing operation used for polishing a metal-containing material. An acidic polishing slurry is used to oxidize the metal and the oxidized metal is included in an effluent slurry stream. The effluent slurry stream is directed into a vessel which forms an electrochemical cell. The component activity of the effluent slurry stream is monitored within the electrochemical cell by measuring the electric potential across the electrodes of the electrochemical cell. When the measured electric potential changes, indicating a change in the composition of the effluent slurry, endpoint is indicated.

Abstract: A method for removing microorganism contamination from a polishing slurry used for chemical mechanical polishing operations in the semiconductor manufacturing industry includes treating a slurry stream with ultraviolet (uv) energy to destroy the microorganisms, then filtering the uv-treated stream to remove the destroyed microorganisms before the slurry is delivered to the polishing apparatus.

Abstract: The specification describes a method and apparatus for chemical-mechanical polishing (CMP) to produce planar layered semiconductor structures. Non-uniformities in polishing behavior due to radial temperature variations across the semiconductor wafer are compensated by locally controlling the temperature of the wafer. Heating/cooling is implemented by installing temperature controlling coils in the head of the wafer carrier.

Abstract: A polishing process to planarize a layer formed on a substrate and to reduce the variations in the thickness of that layer from substrate to substrate. The polishing process is implemented by polishing a substrate using a stable pad material. A stable pad material is formed from a polishing material that has substantially the same or similar density, hardness, and compressibility as polyurethane but is a material other than or substantially other than polyurethane. In an alternative embodiment, the material for the polishing pad may be selected for its compression, high tensile strength, wear resistance and/or resistance to water, diluted acids, and alkalis. In a further alternative embodiment, the material forming the polishing pad may be selected from the group comprising hydrogenated nitrile compounds, fluoroelastomers, or perfluoroelastomers.

Abstract: A method of manufacturing integrated circuits using a carrier fixture. The carrier fixture does not include transport channels or openings for directing a slurry to a substrate being polished and, as a result, damage to the substrate is reduced because the edges adjacent to the substrate are eliminated. The present invention further provides a carrier fixture having an inner support coupled to a ring member that contacts a substrate during the CMP process. The present invention also provides a carrier fixture having inner and outer supports coupled to a ring member.

Abstract: A carrier fixture that does not include transport channels or openings for directing a slurry to a substrate being polished. The carrier fixture may have an inner support coupled to a ring member that contacts a substrate during polishing. The carrier fixture may also have outer supports coupled to the ring member. The carrier fixture is used to manufacture integrated circuits.