Abstract: Liquid silicate products derived from processed organic plant matter (112), such as rice hulls, have improved purity and properties for use in the production of higher purity amorphous silica compositions (180). The liquid silicate can be optically clear, can have a controlled ratio of silica to metal earth oxide components, and can have lower concentrations of undesirable contaminants such as aluminum, chloride, iron, sulfate, and titanium.

Abstract: Liquid silicate products derived from processed organic plant matter (112), such as rice hulls, have improved purity and properties for use in the production of higher purity amorphous silica compositions (180). The liquid silicate can be optically clear, can have a controlled ratio of silica to metal earth oxide components, and can have lower concentrations of undesirable contaminants such as aluminum, chloride, iron, sulfate, and titanium.

Abstract: Liquid silicate products derived from processed organic plant matter (112), such as rice hulls, have improved purity and properties for use in the production of higher purity amorphous silica compositions (180). The liquid silicate can be optically clear, can have a controlled ratio of silica to metal earth oxide components, and can have lower concentrations of undesirable contaminants such as aluminum, chloride, iron, sulfate, and titanium.

Abstract: A chemical distribution system having improved organic solvent fluid purity and consistency includes a vessel containing ion-exchange media positioned within a fluid flow pathway such that the organic solvent fluid passes through the ion-exchange media, thereby effecting removal of undesired impurities. Different embodiments of the invention position the vessel at varying locations within the fluid flow pathway. The chemical distribution system also preferably includes a return chemical flow pathway that recirculates purified organic solvent fluid through the ion-exchange media-containing vessel and thereby enables the system operator to conduct incremental adjustment of the solvent purity until a desired overall purity is attained.

Abstract: A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Abstract: A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Abstract: A method of removing inorganic contamination from dielectric condensate precursor fluids and silicate esters, such as tetraethylorthosilicate (TEOS), methyltriethoxyorthosilicate (MTEOS), hydrogen silsesquioxane (HSQ), methyl silsesquioxane (MSQ), polyarylene ether, benzocyclobutene (BCB), or OSG, includes obtaining a commercial grade fluid having up to 10,000 ppb individual metallic contaminants; converting the sodium form of one or more macroporous ion exchange resin beds to a hydrogen form; converting the chloride form of one or more macroporous ion exchange resin beds to a hydroxide form; drying the macroporous ion exchange resin beds to remove substantially all water from the ion exchange resin beds; passing fluids through the ion exchange resin beds one or more times by recirculating all or a portion of the fluid to obtain a purified fluid having less than 1 ppb of individual metallic contaminants, less than 10 ppb of boron contaminants, and less than 1 ppb of chloride contaminants; and collecting the p

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A chemical distribution system having improved organic solvent fluid purity and consistency includes a vessel containing ion-exchange media positioned within a fluid flow pathway such that the organic solvent fluid passes through the ion-exchange media, thereby effecting removal of undesired impurities. Different embodiments of the invention position the vessel at varying locations within the fluid flow pathway. The chemical distribution system also preferably includes a return chemical flow pathway that recirculates purified organic solvent fluid through the ion-exchange media-containing vessel and thereby enables the system operator to conduct incremental adjustment of the solvent purity until a desired overall purity is attained.

Abstract: A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the residue. Preferably, the amine is a tertiary amine. Preferably, the solvent is selected from the group consisting of DMSO, EC, NMP, acetyl acetone, BLO, acetic acid, DMAC, PC, and a mixture thereof. Next, the photoresist and the residue are removed from the vicinity of the substrate. Preferably, the method continues with a rinsing step in which the substrate is rinsed in the supercritical carbon dioxide and a rinse agent. Preferably, the rinse agent is selected from the group consisting of water, alcohol, a mixture thereof, and acetone. In an alternative embodiment, the amine and the solvent are replaced with an aqueous fluoride.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A commercially available solvent, such as a stripping chemical and/or an organic solvent, is supported by supercritical CO2 to remove a resist, its residue, and/or an organic contaminant off the surface of a semiconductor wafer. Supercritical CO2 has a high solvency which increases with pressure. The supercritical CO2 permits a tremendous reduction in reaction time and amount of chemical utilized for the resist removal process. In a preferred embodiment, the wafer is exposed to the CO2 and chemical mixture in a process chamber heated to a temperature of 20 to 80° C. at a pressure of 1050 to 6000 psig for a period of 10 seconds to 15 minutes.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A process for obtaining an ultra-high purity aqueous ammonium hydroxide solution according to the invention includes the steps of reacting highly pure, typically electronics grade, ammonia (NH.sub.3) with ultrapure water (upw) under conditions effective to produce an ultra-high purity stream of aqueous ammonium hydroxide (NH.sub.4 OH) which is available for immediate use in a wide variety of applications especially those requiring high purity aqueous solutions of ammonium hydroxide.