Abstract: A computer input system includes a mouse including a housing having an interior surface defining an internal volume and a sensor assembly disposed in the internal volume. A processor is electrically coupled to the sensor assembly and a memory component having electronic instructions stored thereon that, when executed by the processor, causes the processor to determine an orientation of the mouse relative to a hand based on a touch input from the hand detected by the sensor assembly. The mouse can also have a circular array of touch sensors or lights that detect hand position and provide orientation information to the user.

Abstract: An input device, such as a mouse, can include a housing defining an exterior grip portion and an internal volume, a sensor assembly disposed in the internal volume, and an emitter electrically coupled to the sensor assembly. In response to the sensor assembly detecting a first touch input on the housing, the emitter sends a first signal including information regarding an angular position of the grip portion. In response to the sensor assembly detecting a second touch input on the housing, the emitter sends a second signal including information regarding a direction of a force exerted on the housing from the second touch input.

Abstract: An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.

Abstract: An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.