Patents by Inventor William H. Xia

William H. Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STT-MRAM design enhanced by switching current induced magnetic field
    Patent number: 9799824
    Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: October 24, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: William H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
  • STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD
    Publication number: 20160276576
    Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
    Type: Application
    Filed: June 1, 2016
    Publication date: September 22, 2016
    Inventors: William H. XIA, Wenqing WU, Kendrick H. YUEN, Abhishek BANERJEE, Xia LI, Seung H. KANG, Jung Pill KIM
  • STT-MRAM design enhanced by switching current induced magnetic field
    Patent number: 9385305
    Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: July 5, 2016
    Assignee: QUALCOMM INCORPORATED
    Inventors: William H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
  • STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD
    Publication number: 20140231940
    Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
    Type: Application
    Filed: February 19, 2013
    Publication date: August 21, 2014
    Applicant: QUALCOMM INCORPORATED
    Inventors: William H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
  • Array structural design of Magnetoresistive Random Access Memory (MRAM) bit cells
    Patent number: 8625341
    Abstract: Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are disclosed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis that is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: January 7, 2014
    Assignee: QUALCOMM Incorporated
    Inventor: William H. Xia
  • Array Structural Design of Magnetoresistive Random Access Memory (MRAM) Bit Cells
    Publication number: 20130100732
    Abstract: Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are disclosed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis that is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.
    Type: Application
    Filed: April 17, 2012
    Publication date: April 25, 2013
    Applicant: QUALCOMM INCORPORATED
    Inventor: William H. Xia