Abstract: The image quality and useful life of an x-ray imaging detector is enhanced by adding a shield layer between the photodiode/thin film transistor (TFT) array and the cesium iodide (CsI)-based scintillator/scintillator layer. The shield layer prevents dynamic charge coupling between a CsI/parylene layer located above the shield layer and the conductive data transfer lines located below the shield layer and operably connected to the individual pixels of the photodiode/TFT array to effectively maintain the level of various image quality parameters over time, including the modulation transfer function (MTF), and the Signal to Noise Ratio (SNR).

Abstract: An imager panel for an x-ray detector for obtaining x-ray images of an object is provided that includes a first portion disposed at the center of the hybrid imager panel that can produce images of a first resolution and a second portion disposed at least partially around the first portion that is capable of producing images of a second resolution. The hybrid imager panel provides a hybrid detector that can be selectively operated to obtain images of varying resolutions corresponding to the first resolution from the first portion, the second resolution from the second portion or a combination thereof.

Abstract: An imager panel for an x-ray detector for obtaining x-ray images of an object is provided that includes a first portion disposed at the center of the hybrid imager panel that can produce images of a first resolution and a second portion disposed at least partially around the first portion that is capable of producing images of a second resolution. The hybrid imager panel provides a hybrid detector that can be selectively operated to obtain images of varying resolutions corresponding to the first resolution from the first portion, the second resolution from the second portion or a combination thereof.

Abstract: Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.

Abstract: A structured scintillator and a detection system employing structured scintillators. More specifically, a structured scintillator comprising a scintillator material having a plurality of isolated structures is disclosed. The structures may be conical in shape. The structures may be formed on a substantially transparent material layer which has been patterned to form a plurality of isolated regions. The structures may be formed on top of the isolated regions to provide isolated scintillator structures having space therebetween. The isolated regions and scintillator structures may be aligned with underlying detection devices.

Abstract: Several eddy current array probes (ECAP) with enhanced drive coil configurations are described. In one arrangement, an ECAP includes a number of EC channels and a number of drive coils. Each of the drive coils is provided for a respective one of the EC channels. The drive coils have alternating polarity with respect to neighboring drive coils. In another arrangement, an ECAP for detecting flaws in a number of scanning and orientation configurations includes at least one substrate, a number of sense coils arranged on the substrate(s), and a drive coil encompassing all of the sense coils. In another arrangement, an ECAP includes substrate, sense coils arranged in at least two rows, and at least one drive line. One drive line is provided for each pair of rows and disposed between the rows.

Abstract: A structured scintillator and a detection system employing structured scintillators. More specifically, a structured scintillator comprising a scintillator material having a plurality of isolated structures is disclosed. The structures may be conical in shape. The structures may be formed on a substantially transparent material layer which has been patterned to form a plurality of isolated regions. The structures may be formed on top of the isolated regions to provide isolated scintillator structures having space therebetween. The isolated regions and scintillator structures may be aligned with underlying detection devices.

Abstract: A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.

Abstract: Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.

Abstract: A detector comprising an electrode formed from a first layer of conductive material, a readout line formed from a second layer of conductive material, and a via electrically connecting the readout line and the electrode. In one embodiment, the detector includes a source electrode and a drain electrode formed from the first layer of conductive material, and a data line formed from the second layer of conductive material, such that the source and drain electrodes are vertically offset from the data line. Alternatively, in another embodiment, the detector includes a gate electrode formed from the first layer of conductive material, and a scan line formed from the second layer of conductive material, such that the gate electrode is vertically offset from the scan line.

Abstract: Several eddy current array probes (ECAP) with enhanced drive coil configurations are described. In one arrangement, an ECAP includes a number of EC channels and a number of drive coils. Each of the drive coils is provided for a respective one of the EC channels. The drive coils have alternating polarity with respect to neighboring drive coils. In another arrangement, an ECAP for detecting flaws in a number of scanning and orientation configurations includes at least one substrate, a number of sense coils arranged on the substrate(s), and a drive coil encompassing all of the sense coils. In another arrangement, an ECAP includes substrate, sense coils arranged in at least two rows, and at least one drive line. One drive line is provided for each pair of rows and disposed between the rows.

Abstract: An annular thin film transistor includes an annular source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of the semiconductor material within the annular source electrode, and an active channel between the drain electrode and the annular source electrode, wherein a surface of the active channel comprises exposed semiconductor material. Further, a serpentine thin film transistor includes a serpentine source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of semiconductor material and substantially within a recess formed by the serpentine source electrode, wherein the drain electrode is configured to substantially conform to the recess, and an active channel between the drain electrode and the serpentine source electrode, wherein the active channel has a substantially consistent length, and wherein a surface of the active channel comprises exposed semiconductor material.

Abstract: A photo-detector having a common electrode comprising a conductive material configured in a non-solid pattern in which there are gaps where there is no conductive material. In one embodiment, the distance (d) or (d?) between conductive portions of the common electrode is in a range from about 3 microns to about 5 microns. Alternatively, in one embodiment, the patterned common electrode covers between 20% to 70% of the surface of the respective photosensor element. A method for making the same is also provided.

Abstract: The present invention provides an X-ray detector assembly and a fabrication method, where the X-ray detector assembly comprises a scintillator material disposed on a detector matrix array disposed on a detector substrate; an encapsulating coating disposed on the scintillator material; a moisture resistant cover disposed over the detector substrate and the encapsulating coating, and an adhesive material disposed between the detector substrate and the moisture resistant cover so as to form a moisture vapor barrier. The adhesive material is disposed so that it is not in contact with the encapsulating coating. The fabrication method of the X-ray detector assembly includes the steps of disposing the encapsulating coating on the scintillator material and a portion of the detector substrate and removing the encapsulating coating from the portion of the detector substrate.

Abstract: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

Abstract: A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements.

Abstract: Apparatus and method are provided for determining mean corpuscular volume of cells in a sample passing through a conductivity cell. A coincidence corrected red blood cell count is generated by conventional means, and a signal indicative of hematocrit level is provided. A digital representation of the corrected red blood cell count is loaded into a register connected to comparator means. A digital output generated in response to the hematocrit level indicated by the hematocrit signal is utilized as a clock pulse train. The clock pulse train has a total length indicative of the hematocrit level, or a multiple thereof. The count indicated by the clock pulse train is compared by the comparator means, which acts as a divider, to the red blood cell count. The output of the comparator means comprises a digital number which is indicative of the mean corpuscular volume of a sample.