Abstract: Provided herein are needle assemblies for intravitreal injection of an implant into an eye of a patient through an unsheathed state and a sheathed state. Such needle assemblies are precise and accurate for proper treatment and prevent further damage to the eye.

Abstract: Provided herein are needle assemblies for intravitreal injection of an (e.g., one or more) implant(s) into an eye of a patient through an unsheathed state and a sheathed state. Such needle assemblies are precise and accurate for proper treatment and prevent further damage to the eye.

Abstract: Provided herein are needle assemblies for intravitreal injection of an implant into an eye of a patient through an unsheathed state and a sheathed state. Such needle assemblies are precise and accurate for proper treatment and prevent further damage to the eye.

Abstract: A safety vial system has a vial adapter subsystem irreversibly mountable to the top of a vial containing a hazardous medicament and a vial base subsystem sealingly engaging a lower portion of the vial adapter subsystem and telescopically movable therein from a first position providing a path for gas sterilization around the vial to a second position wherein the path is closed to form a sterilized expandable, neutral pressure bellows chamber around and below the vial. The device has a removable top cap, a pierceable barrier film, a normally closed needleless valve in fluid communication with a dual lumen spike initially disposed above the film and a frangible product integrity ring holding the activation housing in place for sealed telescopic movement on a main body that surrounds the vial.

Abstract: Provided herein are needle assemblies for intravitreal injection of an implant into an eye of a patient through an unsheathed state and a sheathed state. Such needle assemblies are precise and accurate for proper treatment and prevent further damage to the eye.

Abstract: A safety vial system has a vial adapter subsystem irreversibly mountable to the top of a vial containing a hazardous medicament and a vial base subsystem sealingly engaging a lower portion of the vial adapter subsystem and telescopically movable therein from a first position providing a path for gas sterilization around the vial to a second position wherein the path is closed to form a sterilized expandable, neutral pressure bellows chamber around and below the vial. The device has a removable top cap, a pierceable barrier film, a normally closed needleless valve in fluid communication with a dual lumen spike initially disposed above the film and a frangible product integrity ring holding the activation housing in place for sealed telescopic movement on a main body that surrounds the vial.

Abstract: A semiconductor device includes a metal thin film such as an eFUSE or a precision resistor above and laterally displaced from an interconnect structure. A first dielectric layer is disposed over the interconnect structure and optionally under the metal thin film, and is adapted to prevent etching of the interconnect structure during patterning of the metal thin film. Contacts to the metal thin film and the interconnect are made through a second dielectric layer that is disposed over the metal thin film and over the interconnect.

Abstract: Provided is a ready-to-install apparatus for dispensing carbonated beverages and/or beverages on draught that incorporates a flow sensor and a pinch valve and may be coupled to the end of a beer line (or any other tubing used for beverage dispensing) without having to be integrated within the line (i.e. eliminating the need to make multiple cuts for the valve, the flow sensor, etc.) The beverage dispensing apparatus reduces foaming by reducing the number of components that come into contact with the fluid and/or interfere with flow. For example, the beverage dispensing apparatus may utilize an external flow sensor to reduce the creation of nucleation sites where CO2 bubbles may form. In another example, a pinch valve may be used to prevent excessive foaming in place of conventional valves that must be placed proximal to the keg.

Abstract: Techniques are disclosed for automating how information about sporting events is captured, processed, and stored for delivery to interested users. In an exemplary embodiment, score data for a sporting event is captured at a score source and communicated to a remote destination over a network as a URL request where score data is included in a portion of the URL following a domain name portion. In another exemplary embodiment, a scoreboard identifier and sporting event schedule data is used to determine how to translate received score data prior to loading in a database.

Abstract: A trailer jack stand for supporting a trailer comprising: a pedestal stand, where stand attaches to a trailer jack, said stand includes a top connecting section and a pivoting section; a center mount pin, where the mount pin attaches the stand to the jack through the top connecting section; a locking pin, where the locking pin secures the mount pin into place; a platform, where the platform attaches to the bottom of the pivoting section; and a spring assembly, where the spring assembly includes a top pivot pin extending from the top connecting section, a stand pin extending from the pivoting section and a spring attached between the pivot pin and stand pin. The pivoting section is capable of pivoting between a retracted position and an extended position, where in the extended position the stand supports the trailer.

Abstract: A trailer jack stand for supporting a trailer comprising: a pedestal stand, where stand attaches to a trailer jack, said stand includes a top connecting section and a pivoting section; a center mount pin, where the mount pin attaches the stand to the jack through the top connecting section; a locking pin, where the locking pin secures the mount pin into place; a platform, where the platform attaches to the bottom of the pivoting section; and a spring assembly, where the spring assembly includes a top pivot pin extending from the top connecting section, a stand pin extending from the pivoting section and a spring attached between the pivot pin and stand pin. The pivoting section is capable of pivoting between a refracted position and an extended position, where in the extended position the stand supports the trailer.

Abstract: In an embodiment of a method of financing an entity, such as an asset management firm, a financing provider invests assets in the entity. The financing provider receives a revenue share interest in the financed entity. No ownership interest in the entity is given to the financing provider during the term of the revenue share interest, and no debt is used. To evaluate and price the investment, a revenue forecasting model may be used.

Abstract: A semiconductor structure and method of manufacturing and more particularly a CMOS device with a stress inducing material embedded in both gates and also in the source/drain region of the PFET. The PFET region and the NFET region having a different sized gate to vary the device performance of the NFET and the PFET.

Abstract: The invention relates to a semiconductor structure and method of manufacturing and more particularly to a CMOS device with a stress inducing material embedded in both gates and also in the source/drain region of the PFET and varying thickness of the PFET and NFET channel. In one embodiment, the structure enhances the device performance by varying the thickness of the top Silicon layer respective to the NFET or the PFET.

Abstract: A method for fabricating a silicide gate field effect transistor includes masking a silicon source/drain region prior to forming the silicide gate by annealing a metal silicide forming metal layer contacting a silicon-containing gate. The silicide gate may be either a fully silicided gate or a partially silicided gate. After unmasking the source/drain region a silicide layer may be formed upon the source/drain region, and also upon the partially silicided gate. The second silicide layer and the partially silicided gate also provide a fully silicided gate.

Abstract: An integration scheme for providing Si gates for nFET devices and SiGe gates for pFET devices on the same semiconductor substrate is provided. The integration scheme includes first providing a material stack comprising, from bottom to top, a gate dielectric, a Si film, and a hard mask on a surface of a semiconductor substrate that includes at least one nFET device region and at least one pFET device region. Next, the hard mask is selectively removed from the material stack in the at least one pFET device region thereby exposing the Si film. The exposed Si film is then converted into a SiGe film and thereafter at least one nFET device is formed in the least one nFET device region and at least one pFET device is formed in the at least one pFET device region. In accordance with the present invention, the least one nFET device includes a Si gate and the at least one pFET includes a SiGe gate.

Abstract: An integration scheme that enables full silicidation (FUSI) of the nFET and pFET gate electrodes at the same time as that of the source/drain regions is provided. The FUSI of the gate electrodes eliminates the gate depletion problem that is observed with polysilicon gate electrodes. In addition, the inventive integration scheme creates different silicon thicknesses of the gate electrode just prior to silicidation. This feature of the present invention allows for fabricating nFETs and pFETs that have a band edge workfunction that is tailored for the specific device region.

Abstract: A sheet resistance stabilized recrystallized antimony doped region may be formed within a semiconductor substrate by annealing a corresponding antimony doped amorphized region at a temperature from about 1050° C. to about 1400° C. for a time period from about 0.1 to about 10 milliseconds. Preferably, a laser surface treatment is used. The laser surface treatment preferably uses a solid phase epitaxy. In addition, the antimony doped region may be co-doped with at least one of a phosphorus dopant and an arsenic dopant. The antimony dopant and the laser surface treatment lend sheet resistance stability that is otherwise absent when forming solely phosphorus and/or arsenic doped regions.

Abstract: A mold form fryer utilizing a top conveyor that transports snack pieces through a constant velocity oil stream without the need for a bottom mating mold or conveyor. Herein, the form fryer is provided with a top conveyor disposed above a fryer oil pan positioned longitudinally through the fryer. Uncooked snack pieces are provided to the fryer oil pan by a bottom entrance conveyor. Snack pieces, once in oil within the fryer, meet with a top conveyor having convex molding surfaces with product-centering elements. At the exit portion of the fryer, a bottom exit conveyor receives the cooked snack pieces from the top conveyor. As no continuous bottom conveyor is utilized, the fryer oil pan may be provided with a reduced volume segment situated between the bottom entrance and exit conveyors.

Abstract: A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.