Patents by Inventor William Hoke

William Hoke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE
    Publication number: 20070164313
    Abstract: A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.
    Type: Application
    Filed: March 30, 2007
    Publication date: July 19, 2007
    Inventors: William Hoke, John Mosca
  • Strain compensated high electron mobility transistor
    Publication number: 20070052048
    Abstract: A semiconductor structure having a III-V substrate; a first III-V donor layer having a relatively wide bandgap disposed over the substrate; a III-V channel layer having a relatively narrow bandgap disposed on the donor layer; a second III-V donor layer disposed on the channel layer having a relatively wide bandgap. The first III-V donor provides both tensile strain to compensate compressive strain in the channel layer and carriers to the channel layer.
    Type: Application
    Filed: September 8, 2005
    Publication date: March 8, 2007
    Inventor: William Hoke
  • Gallium nitride high electron mobility transistor structure
    Publication number: 20060261370
    Abstract: A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.
    Type: Application
    Filed: May 19, 2005
    Publication date: November 23, 2006
    Inventors: William Hoke, John Mosca