Patents by Inventor William Holber
William Holber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230392283Abstract: A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.Type: ApplicationFiled: August 22, 2023Publication date: December 7, 2023Applicant: Plasmability, LLCInventors: Robert J. Basnett, Andrew Francis Basnett, Amanda Charris-Hernandez, William Holber, Travis Charles Wade, Adam James Brown
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Publication number: 20230392255Abstract: A plasma chemical vapor deposition system for growing diamond and diamond-like materials includes a process chamber having an exhaust port that is coupled to an input of a vacuum pump. A plasma generator generates a plasma in the process chamber. A cooling stage is positioned in the process chamber with a substrate holder positioned on a top surface that is configured to mount one or more substrates so they are exposed to the plasma generated by the plasma generator. The substrate holder defines a plenum having one or more portions. One or more pressure controllers are each configured to control a pressure in one of the first and second portion of the plenum so as to control a relative temperature of adjacent portions of the substrate holder.Type: ApplicationFiled: June 3, 2023Publication date: December 7, 2023Applicant: Plasmability, LLC.Inventor: William Holber
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Publication number: 20220119983Abstract: A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.Type: ApplicationFiled: December 7, 2020Publication date: April 21, 2022Applicant: Plasmability, LLCInventors: Robert J. Basnett, Andrew Francis Basnett, Amanda Charris-Hernandez, William Holber, Travis Charles Wade, Adam James Brown
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Patent number: 10704161Abstract: A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.Type: GrantFiled: August 30, 2019Date of Patent: July 7, 2020Assignee: Plasmability, LLCInventors: William Holber, Robert J. Basnett
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Publication number: 20200010976Abstract: A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.Type: ApplicationFiled: August 30, 2019Publication date: January 9, 2020Applicant: Plasmability, LLCInventors: William Holber, Robert J. Basnett
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Patent number: 10443150Abstract: A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.Type: GrantFiled: May 16, 2016Date of Patent: October 15, 2019Assignee: Plasmability, LLCInventors: William Holber, Robert J. Basnett
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Publication number: 20180155839Abstract: A method of CVD plasma processing for depositing at least one of diamond, diamond-like-carbon, or graphene comprising includes forming a vacuum chamber comprising a first toroidal plasma source comprising a conduit and a magnetic core, a second toroidal plasma source comprising a conduit and a magnetic core, and a process chamber that is common to both the first and second toroidal plasma source. Gas is introduced into the vacuum chamber. A first RF electromagnetic field is applied to the magnetic core surrounding the conduit of the first toroidal plasma source to form a first toroidal plasma loop discharge in the vacuum chamber. A second RF electromagnetic field is applied to the magnetic core surrounding the conduit of the second toroidal plasma source to form a second toroidal plasma loop discharge in the vacuum chamber. A workpiece is positioned in the process chamber for plasma processing at a distance from a hot plasma core to a surface of the workpiece that is in a range from 0.1 cm to 5 cm.Type: ApplicationFiled: January 22, 2018Publication date: June 7, 2018Applicant: Plasmability, LLCInventors: William Holber, Robert J. Basnett
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Patent number: 9909215Abstract: A method of CVD plasma processing for depositing at least one of diamond, diamond-like-carbon, or graphene includes forming a vacuum chamber comprising a conduit and a process chamber. A gas is introduced into the vacuum chamber. An RF electromagnetic field is applied to a magnetic core to form a toroidal plasma loop discharge in the vacuum chamber. A workpiece is positioned in the process chamber for plasma processing at a distance from a hot plasma core to a surface of the workpiece that is in a range from 0.1 cm to 5 cm. A gas comprising hydrogen is introduced to the workpiece so that the toroidal plasma loop discharge generates atomic hydrogen.Type: GrantFiled: April 18, 2017Date of Patent: March 6, 2018Assignee: Plasmability, LLCInventors: William Holber, Robert J. Basnett
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Publication number: 20170298513Abstract: A plasma processing apparatus including a vacuum chamber comprising a conduit, a process chamber, and a first gas input port for introducing gas into the vacuum chamber, and a pump port for evacuating gas from the vacuum chamber. A magnetic core surrounds the conduit. An output of an RF power supply is electrically connected to the magnetic core. The RF power supply energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the vacuum chamber. A platen that supports a workpiece during plasma processing is positioned in the process chamber.Type: ApplicationFiled: April 18, 2017Publication date: October 19, 2017Applicant: Plasmability, LLCInventors: William Holber, Robert J. Basnett
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Publication number: 20160340798Abstract: A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.Type: ApplicationFiled: May 16, 2016Publication date: November 24, 2016Applicant: Plasmability, LLCInventors: William Holber, Robert J. Basnett
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Publication number: 20140272108Abstract: A plasma processing apparatus including a vacuum chamber comprising a conduit, a process chamber, and a first gas input port for introducing gas into the vacuum chamber, and a pump port for evacuating gas from the vacuum chamber. A magnetic core surrounds the conduit. An output of an RF power supply is electrically connected to the magnetic core. The RF power supply energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the vacuum chamber. A platen that supports a workpiece during plasma processing is positioned in the process chamber.Type: ApplicationFiled: March 14, 2014Publication date: September 18, 2014Applicant: PLASMABILITY, LLCInventors: William Holber, Robert J. Basnett
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Publication number: 20070272299Abstract: A method and apparatus for activating and dissociating gases involves generating an activated gas with a plasma located in a chamber. A downstream gas input is positioned relative to an output of the chamber to enable the activated gas to facilitate dissociation of a downstream gas introduced by the gas input, wherein the dissociated downstream gas does not substantially interact with an interior surface of the chamber.Type: ApplicationFiled: December 15, 2006Publication date: November 29, 2007Applicant: MKS Instruments, Inc.Inventors: Jack Schuss, William Holber, John Summerson, Susan Trulli, Weiguo Zhang, Xing Chen
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Publication number: 20070145023Abstract: Plasma ignition and cooling apparatus and methods for plasma systems are described. An apparatus can include a vessel and at least one ignition electrode adjacent to the vessel. A total length of a dimension of the at least one ignition electrode is greater than 10% of a length of the vessel's channel. The apparatus can include a dielectric toroidal vessel, a heat sink having multiple segments urged toward the vessel by a spring-loaded mechanism, and a thermal interface between the vessel and the heat sink. A method can include providing a gas having a flow rate and a pressure and directing a portion of the flow rate of the gas into a vessel channel. The gas is ignited in the channel while the remaining portion of the flow rate is directed away from the channel.Type: ApplicationFiled: March 12, 2007Publication date: June 28, 2007Applicant: MKS Instruments, Inc.Inventors: William Holber, Xing Chen, Andrew Cowe, Matthew Besen, Ronald Collins, Susan Trullin, Shouqian Shao
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Publication number: 20070145018Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.Type: ApplicationFiled: December 11, 2006Publication date: June 28, 2007Applicant: MKS Instruments, Inc.Inventors: Donald Smith, Xing Chen, William Holber, Eric Georgelis
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Publication number: 20070139122Abstract: A system and method are provided for delivering power to a dynamic load. The system includes a power supply providing DC power having a substantially constant power open loop response, a power amplifier for converting the DC power to RF power, a sensor for measuring voltage, current and phase angle between voltage and current vectors associated with the RF power, an electrically controllable impedance matching system to modify the impedance of the power amplifier to at least a substantially matched impedance of a dynamic load, and a controller for controlling the electrically controllable impedance matching system. The system further includes a sensor calibration measuring module for determining power delivered by the power amplifier, an electronic matching system calibration module for determining power delivered to a dynamic load, and a power dissipation module for calculating power dissipated in the electrically controllable impedance matching system.Type: ApplicationFiled: October 31, 2006Publication date: June 21, 2007Applicant: MKS INSTRUMENTS, INC.Inventors: Siddharth Nagarkatti, Michael Kishinevsky, Ali Shajii, Timothy Kalvaitis, William McKinney, Daniel Goodman, William Holber, John Smith
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Publication number: 20060137612Abstract: A method and apparatus for activating and dissociating gases involves generating an activated gas with a plasma located in a chamber. A downstream gas input is positioned relative to an output of the chamber to enable the activated gas to facilitate dissociation of a downstream gas introduced by the gas input, wherein the dissociated downstream gas does not substantially interact with an interior surface of the chamber.Type: ApplicationFiled: December 2, 2005Publication date: June 29, 2006Applicant: MKS Instruments, Inc.Inventors: William Holber, Xing Chen
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Publication number: 20060118240Abstract: A method and apparatus for activating and dissociating gases involves generating an activated gas with a plasma located in a chamber. A downstream gas input is positioned relative to an output of the chamber to enable the activated gas to facilitate dissociation of a downstream gas introduced by the gas input, wherein the dissociated downstream gas does not substantially interact with an interior surface of the chamber.Type: ApplicationFiled: December 3, 2004Publication date: June 8, 2006Applicant: Applied Science and Technology, Inc.Inventors: William Holber, Xing Chen
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Publication number: 20060086699Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.Type: ApplicationFiled: November 8, 2005Publication date: April 27, 2006Applicant: MKS Instruments, Inc.Inventors: William Holber, John Smith, Xing Chen, Donald Smith
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Publication number: 20050145173Abstract: Plasma ignition and cooling apparatus and methods for plasma systems are described. An apparatus can include a vessel and at least one ignition electrode adjacent to the vessel. A total length of a dimension of the at least one ignition electrode is greater than 10% of a length of the vessel's channel. The apparatus can include a dielectric toroidal vessel, a heat sink having multiple segments urged toward the vessel by a spring-loaded mechanism, and a thermal interface between the vessel and the heat sink. A method can include providing a gas having a flow rate and a pressure and directing a portion of the flow rate of the gas into a vessel channel. The gas is ignited in the channel while the remaining portion of the flow rate is directed away from the channel.Type: ApplicationFiled: February 15, 2005Publication date: July 7, 2005Applicant: MKS Instruments, Inc.Inventors: William Holber, Xing Chen, Andrew Cowe, Matthew Besen, Ronald Collins, Susan Trulli, Shouqian Shao