Abstract: The preferred embodiment of the invention disclosed herein is a transistor that includes a body of semiconductor material having first and second major surfaces. An emitter doped with atoms of one conductivity type is formed in the body and extends into it from the first major surface. The emitter geometry is such that it has hub portion and finger portions. Within the closed area formed by the hub portion of the emitter, there is provided a central region doped with atoms of the same conductivity type as the emitter and this central region is slightly spaced from the inner periphery of the hub portion. Over the central region and the space between it and the inner periphery of the emitter is provided an oxide layer over which electrode metallization is deposited so as to be in contact with the hub portion but spaced from the central region.

Abstract: A contact clip, primarily for use in semiconductor devices comprises a layer of material having a relatively high coefficient of thermal expansion and another layer of relatively low coefficient of thermal expansion. Such a clip improves the contact between the clip and the semiconductor pellet to which it is soldered not only during device assembly but also at high operating temperatures as well.

Abstract: A semiconductor mesa device having reduced leakage current comprises a moat substantially completely filled with a passivating material. A layer of conductive material overlies the passivating material and is spaced apart from the adjacent semiconductor material. Such a structure is particularly advantageous for use in low current devices.

Abstract: In devices including a body of semiconductor material having layers of solder on a surface thereof serving as current connectors, flow of solder from the layers to terminal leads soldered to the layers during the terminal lead soldering process is prevented by the presence of a gap between the terminal leads and the solder layers. Electrical connection between the solder layers and the terminal leads is provided by conductive regions within the body to which the terminal leads and the solder layers are contacted.